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Mechanisms of Atomic–Molecular Processes Underlying Si and GaAs Nanowire Crystallization

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Abstract—

We analyze atomic–molecular processes underlying Si and GaAs nanowire growth. The atomic structure of the crystal–melt interface has been shown to lead to poorer wettability of the (111) Si and \(\left( {\bar {1}\bar {1}\bar {1}} \right)\)В GaAs faces by metal solvent droplets, Si and GaAs nanowire growth in the 〈111〉 and \(\left\langle {\bar {1}\bar {1}\bar {1}} \right\rangle \)В directions, and the formation of gallium arsenide crystals with cubic and hexagonal lattices.

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ACKNOWLEDGMENTS

In this study, we used equipment at the Nanoelectronics and Nanotechnological Devices Shared Research Facilities Center, Voronezh State Technical University.

Funding

This work was supported by the Russian Foundation for Basic Research, project no. 19-33-90219.

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Authors and Affiliations

  1. Voronezh State Technical University, 394026, Voronezh, Russia

    V. A. Nebol’sin, N. Swaikat & V. V. Korneeeva

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  1. V. A. Nebol’sin
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  2. N. Swaikat
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  3. V. V. Korneeeva
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Correspondence to V. A. Nebol’sin.

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Nebol’sin, V.A., Swaikat, N. & Korneeeva, V.V. Mechanisms of Atomic–Molecular Processes Underlying Si and GaAs Nanowire Crystallization. Inorg Mater 57, 219–226 (2021). https://doi.org/10.1134/S0020168521030109

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  • DOI: https://doi.org/10.1134/S0020168521030109

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