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Effects of Rare-Earth (Gd and Er) Doping and Electric Field on the Photoconductivity of p-GaSe Single Crystals

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Abstract—

The photoconductivity of p-GaSe single crystals doped with rare-earth elements (REEs) (gadolinium and erbium) has been studied at doping levels in the range 10–5 ≤ NREE ≤ 10–1 at %, temperatures Т ≈ 77–300 K, and electric field strengths from 20 to 2500 V/cm. The results demonstrate that the magnitude and characteristics of the photoconductivity of the p-GaSe single crystals are independent of the chemical nature of the dopants and vary nonmonotonically with NREE. Throughout the temperature range studied, the results obtained for NREE ≥ 0.01 at % are well consistent with the theory of photoconduction in spatially uniform crystalline semiconductors. The results obtained at NREE < 0.01 at % and Т ≤ 250 K can be accounted for by taking into account the presence of random macroscopic defects in the crystals studied.

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Authors and Affiliations

  1. Baku State University, AZ 1148, Baku, Azerbaijan

    A. Sh. Abdinov

  2. Azerbaijani State University of Economics (UNEC), AZ 1001, Baku, Azerbaijan

    R. F. Babaeva

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  1. A. Sh. Abdinov
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  2. R. F. Babaeva
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Correspondence to R. F. Babaeva.

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Translated by O. Tsarev

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Abdinov, A.S., Babaeva, R.F. Effects of Rare-Earth (Gd and Er) Doping and Electric Field on the Photoconductivity of p-GaSe Single Crystals. Inorg Mater 57, 119–123 (2021). https://doi.org/10.1134/S0020168521020011

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  • DOI: https://doi.org/10.1134/S0020168521020011

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