Abstract
4H-silicon carbide ingots with high structural perfection have been grown by the modified Lely method (LETI method) on 100-mm-diameter seeds. Using our experimental data and theoretical analysis, we have systematized the key factors responsible for the degradation of the crystal structure of the ingots during the growth process. The formation of parasitic polytype inclusions in the early stages of growth has been shown to lead to the formation of antiphase boundaries and a mosaic substructure in the ingot.
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ACKNOWLEDGMENTS
We are grateful to D.D. Avrov and N.V. Sharenkova for useful discussions of our results.
This paper is devoted to the memory of Professor Yurii Mikhailovich Tairov (1931–2019), one of the originators of the growth method.
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Bykov, Y.O., Lebedev, A.O. & Shcheglov, M.P. On the Structural Perfection of Large-Diameter Silicon Carbide Ingots. Inorg Mater 56, 928–933 (2020). https://doi.org/10.1134/S0020168520090034
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DOI: https://doi.org/10.1134/S0020168520090034