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Hopping Conduction in AgSbSe2 and (AgSbSe2)0.9(PbTe)0.1

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Abstract—

AgSbSe2 and (AgSbSe2)0.9(PbTe)0.1 have been characterized by X-ray diffraction, differential scanning calorimetry, and temperature-dependent electric conductivity and thermoelectric power measurements in the range 80–330 K. The results demonstrate that charge transport in both materials is due to hopping of charge carriers between localized states. We have evaluated the temperature range of hopping conduction and the Fermi level density of localized states in these materials.

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Authors and Affiliations

  1. Institute of Physical Problems, Baku State University, ul. Khalilova 23, AZ1148, Baku, Azerbaijan

    S. S. Ragimov

  2. Institute of Physics, Academy of Sciences of Azerbaijan, pr. Javida 131, AZ1143, Baku, Azerbaijan

    S. S. Ragimov, A. A. Saddinova, A. I. Alieva & R. I. Selim-zade

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  1. S. S. Ragimov
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  2. A. A. Saddinova
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  3. A. I. Alieva
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  4. R. I. Selim-zade
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Correspondence to S. S. Ragimov.

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Translated by O. Tsarev

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Ragimov, S.S., Saddinova, A.A., Alieva, A.I. et al. Hopping Conduction in AgSbSe2 and (AgSbSe2)0.9(PbTe)0.1 . Inorg Mater 56, 779–784 (2020). https://doi.org/10.1134/S0020168520080130

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  • DOI: https://doi.org/10.1134/S0020168520080130

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