Abstract—
We report an experimental study concerned with the synthesis and luminescence properties of Al5O6N aluminum oxynitride doped with Tb3+ in the concentration range 0.025–0.5 at %. All of the samples, prepared by firing appropriate mixtures in a nitrogen atmosphere at 1600°C, consisted predominantly of phase-pure γ-ALON (Al5O6N), with small amounts of impurity phases: Al7O3N5 aluminum oxynitride and Tb3Al5O12 terbium aluminate. Their pulsed cathodoluminescence and photoluminescence spectra contain emission bands typical of Tb3+ ions. The concentration threshold for luminescence quenching corresponds to a Tb3+ concentration at a level of 0.4 at %. A Tb3+ cross relaxation effect found in Al5O6N:Tb3+ is discussed and photoluminescence spectra are shown to be inhomogeneous at low Tb3+ concentrations in Al5O6N.
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ACKNOWLEDGMENTS
We are grateful to A.E. Baranchikov for the electron-microscopic characterization of the samples.
Funding
This work was supported by the Russian Foundation for Basic Research, project no. 17-03-00630_a and by Act 211 Government of the Russian Federation, contract no. 2.A03.21.0006.
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Akhmadullina, N.S., Ishchenko, A.V., Yagodin, V.V. et al. Synthesis and Luminescence Properties of Tb3+-Doped Aluminum Oxynitride. Inorg Mater 55, 1223–1229 (2019). https://doi.org/10.1134/S002016851912001X
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DOI: https://doi.org/10.1134/S002016851912001X