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Defect Structure and Photogenerated Carrier Loss Processes in Cu1 –x(In0.7Ga0.3)Se2 (0 ≤ x ≤ 0.30) Chalcopyrite Solid Solutions

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Abstract—

Cu1 –x(In0.7Ga0.3)Se2 (0 ≤ x ≤ 0.30) copper-deficient solid solutions with the chalcopyrite structure have been synthesized and their unit-cell parameters have been determined as functions of composition. Their 78-K cathodoluminescence spectra show a band centered at 1.13 eV, which is most likely due to Cu2+ ⋅ VCu defect associates. Microwave photoconductivity data demonstrate that the defect associates act as electron traps, considerably reducing the lifetime of photogenerated current carriers.

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FUNDING

This work was supported by the Russian Federation Ministry of Education and Science (agreement no. 14.613.21.0065; unique identifier of the project: RFMEFI61317X0065).

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Authors and Affiliations

  1. Institute of Problems of Chemical Physics, Russian Academy of Sciences, pr. Akademika Semenova 1, 142432, Chernogolovka, Moscow oblast, Russia

    M. V. Gapanovich, E. V. Rabenok & G. F. Novikov

  2. Moscow State University, 119991, Moscow, Russia

    I. N. Odin, P. S. Orishina & G. F. Novikov

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  1. M. V. Gapanovich
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  2. I. N. Odin
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  3. E. V. Rabenok
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  4. P. S. Orishina
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  5. G. F. Novikov
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Correspondence to I. N. Odin.

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Translated by O. Tsarev

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Gapanovich, M.V., Odin, I.N., Rabenok, E.V. et al. Defect Structure and Photogenerated Carrier Loss Processes in Cu1 –x(In0.7Ga0.3)Se2 (0 ≤ x ≤ 0.30) Chalcopyrite Solid Solutions. Inorg Mater 55, 648–652 (2019). https://doi.org/10.1134/S0020168519070057

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  • DOI: https://doi.org/10.1134/S0020168519070057

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