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Glass-Forming Region in the Sm2S3–Ga2S3–EuS System

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Abstract—

The boundaries of glass-forming regions in the Sm2S3–Ga2S3–EuS system have been located using simultaneous thermal analysis, X-ray diffraction, and X-ray microanalysis. We have studied IR spectra of glass with the composition (Ga2S3)0.80(Sm2S3)0.10(EuS)0.10 and its stability in an inert atmosphere. The glass has been shown to soften at 985 K (Tg), which is accompanied by an endothermic peak. It crystallizes at 1112 K (Tx). Exothermic peaks observed in the range 1203–1222 K suggest that this glass has a tendency to decompose in several steps. In the IR spectra of the glasses, the bands due to the M–S (M = Sm, Ga, Eu) bonds have higher intensity and are shifted to higher frequencies relative to those in the spectra of their crystalline constituent components, which is probably due to the increase in M–S bond covalence.

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REFERENCES

  1. Kertman, A.V., Optical sulfide ceramics, Soros. Obrazov. Zh., 2000, vol. 6, no. 2, pp. 93–98.

    Google Scholar 

  2. Minaev, V.S., Stekloobraznye poluprovodnikovye splavy (Glassy Semiconductor Alloys), Moscow: Metallurgiya, 1991.

  3. Gregor, R.E., Optical micro-resonators in chalcogenide glass. Southampton: University of Southampton Faculty of Science, Engineering and Mathematics, 2009. http://eprints.soton.ac.uk

    Google Scholar 

  4. Ivanova, T.Yu., Man’shina, A.A., Kurochkin, A.V., et al., Er3+ to glass matrix energy transfer in Ga–Ge–S:Er3+ system, J. Non-Cryst. Solids, 2002, vol. 298, pp. 7–14. https://doi.org/10.1016/S0022-3093(01)01044-4

    Article  CAS  Google Scholar 

  5. Bishop, S.G., Turnbull, D.A., and Aitken, B.G., Excitation of rare-earth emission in chalcogenide glasses by broadband Urbach edge absorption, J. Non-Cryst. Solids, 2000, vols. 266–269, pp. 876–883. https://doi.org/10.1016/S0022-3093(99)00859-5

    Article  Google Scholar 

  6. Harada, H. and Tanaka, K., Photoluminescence from Pr+3 doped chalcogenide glasses excited by band gap light, J. Non-Cryst. Solids, 1999, vol. 246, pp. 189–196. https://doi.org/10.1016/S0022-3093(99)00095-2

    Article  CAS  Google Scholar 

  7. Nemec, P., Frumar, M., Frumarova, M., et al., Pulsed laser deposition of pure and praseodymium-doped Ge–Ga–Se amorphous chalcogenide films, Opt. Mater., 2000, vol. 15, pp. 191–197. https://doi.org/10.1016/S0925-3467(00)00035-5

    Article  CAS  Google Scholar 

  8. Kadono, K., Higuchib, H., Takahashib, M., et al., Upconversion luminescence of Ga2S3-based sulfide glasses containing Er3+ ions, J. Non-Cryst. Solids, 1995, vol. 184, pp. 309–313. https://doi.org/10.1016/0022-3093(94)00635-0

    Article  CAS  Google Scholar 

  9. Barthou, Ch., Benalloul, P., Tagiyev, B.G., et al., Energy transfers between Eu2+ and Er3+ in EuGa2S4:Er3+, J. Phys.: Condens. Matter, 2004, vol. 16, pp. 8075–8084. https://doi.org/10.1088/0953-8984/16/45/029

    Article  CAS  Google Scholar 

  10. Tveryanovich, Yu.S., Concentration quenching of luminescence of rare-earth ions in chalcogenide glasses, Glass Phys. Chem., 2003, vol. 29, no. 2, pp. 166–168. https://doi.org/10.1023/A:1023407125519

    Article  CAS  Google Scholar 

  11. Borisov, E.N., Smirnov, V.B., Tveryanovich, A.S., et al., Deposition of Er3+ doped chalcogenide glass films by excimer laser ablation, J. Non-Cryst. Solids, 2003, vols. 326–327, pp. 316–319. https://doi.org/10.1016/S0022-3093(03)00421-6

    Article  CAS  Google Scholar 

  12. Bakhtiyarlı, I.B., Abdullayeva, A.S., Mirzoyeva, A.A., et al., Physicochemical properties of glasses with the compositions (Ga2S3)0.60(La2S3)0.20(Sm2S3)0.20 and (Ga2S3)0.55(La2S3)0.15(Sm2S3)0.30, 1st Int. Chemistry and Chemical Engineering Conf., Baku: Qafqaz Univ., 2003, pp. 345–351.

  13. Bakhtiyarli, I.B., Abdullayeva, A.S., Mirzoyeva, A.M., et al., Physicochemical properties of glasses in the La2S3–Ga2S3–Nd2S system, Azerb. Khim. Zh., 2012, no. 3, pp. 82–84.

  14. Tsendin, K.D. and Bogoslovskiy, N.A., Physics of switching and memory effects in chalcogenide glassy semiconductors, Semiconductors, 2012, vol. 46, no. 5, pp. 559–590. https://doi.org/10.1134/S1063782612050065

    Article  CAS  Google Scholar 

  15. Turnbull, D.A., Aitken, B.G., and Bishop, S.G., Broad-band excitation mechanism for photoluminescence in Er-doped Ge25Ga1.7As8.3S65 glasses, J. Non-Cryst. Solids, 1999, vol. 244, pp. 260–266. https://doi.org/10.1016/S0022-3093(99)00006-X

    Article  CAS  Google Scholar 

  16. Vasil’eva, A.S., Borisov, E.N., Klotchenko, S.A., et al., Vitreous films of Ga40Ge17S43 composition as a biochip substrate, Glass Phys. Chem., 2014, vol. 40, no. 4, pp. 467–469. https://doi.org/10.1134/S1087659614040129

    Article  CAS  Google Scholar 

  17. Goodyear, I. and Steygman, G.A., The crystal structure of α-Ga2S3, Acta Crystallogr., 1963, vol. 16, no. 10, pp. 946–949. https://doi.org/10.1107/S0365110X63002565

    Article  CAS  Google Scholar 

  18. Kost, M.E., Shilov, A.L., Mikheeva, V.I., et al., Soedineniya redkozemel’nykh elementov. Gidridy, boridy, karbidy, fosfidy, pniktidy, khal’kogenidy, psevdogalogenidy (Rare-Earth Compounds: Hydrides, Borides, Carbides, Phosphides, Pnictides, Chalcogenides, and Pseudohalides), Moscow: Nauka, 1983.

  19. Bakhtiyarli, I.B., Abdullayeva, A.S., Fatullayeva, G.M., et al., Physiochemical properties of glass-forming Nd2S3–Ga2S3–EuS and La2O3–As2S3–Eu2O3 melts, Polifunktsional’nye khimicheskie materialy i tekhnologii. Materialy nauchnoi konferentsii (Polyfunctional Chemical Materials: Proc. Sci. Conf.), Slizhov, Yu.G., Ed., Tomsk: Izdatel’skii Dom Tomsk. Gos. Univ., 2015, vol. 1, pp. 20–22.

  20. Bəxtiyarlı, İ.B. and Kərimov, O.Ş., Lantanoidlərin qalliumla oksisulfid şüşələri, Kim. Probl. J., 2003, no. 3, pp. 27–29.

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Authors and Affiliations

  1. Institute of Catalysis and Inorganic Chemistry, Academy of Sciences of Azerbaijan, pr. Javida 113, AZ1143, Baku, Azerbaijan

    I. B. Bakhtiyarli, A. S. Abdullayeva, O. Sh. Kerimli, A. A. Mirzoyeva & N. B. Farkhatova

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  1. I. B. Bakhtiyarli
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  2. A. S. Abdullayeva
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  3. O. Sh. Kerimli
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  4. A. A. Mirzoyeva
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  5. N. B. Farkhatova
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Correspondence to I. B. Bakhtiyarli.

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Translated by O. Tsarev

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Bakhtiyarli, I.B., Abdullayeva, A.S., Kerimli, O.S. et al. Glass-Forming Region in the Sm2S3–Ga2S3–EuS System. Inorg Mater 55, 623–627 (2019). https://doi.org/10.1134/S0020168519060025

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  • DOI: https://doi.org/10.1134/S0020168519060025

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