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Composition, Structure, and Dielectric Characteristics of (Sr0.5Ba0.5)Nb2O6/Pt(111)/Si(001) Films

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Abstract—

Sr0.5Ba0.5Nb2O6 (SBN) relaxor ferroelectric films of different thicknesses have been grown on Pt(111)/Si(001) substrates by rf sputtering. We have studied their structure, composition–depth profiles, lattice dynamics, and dielectric properties at temperatures from 25 to 200°C. The results demonstrate that the composition of the films does not vary with depth and corresponds to that of the ceramic target used and that the SBN/Pt interface has a transition layer more than 30 nm in thickness, consisting of a mixture of platinum and SBN. According to X-ray diffraction characterization results, the films are polycrystalline, with a preferential orientation of the SBN [001] axis along the normal to the substrate surface. At a film thickness of 950 nm or above, the SBN films on Pt(111)/Si substrates differ insignificantly in unit-cell parameters, lattice dynamics, and Burns temperature from SBN single crystals. We discuss general relationships of structure formation and characteristics of the films.

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ACKNOWLEDGMENTS

This work was supported by the Russian Federation Ministry of Education and Science (state research target for the Southern Scientific Center, Russian Academy of Sciences, theme no. 01 201 354 247) and the Russian Foundation for Basic Research (grant nos. 16-32-60095 mol_a_dk and 16-29-14013 ofi_m).

We are grateful to V.M. Korol’ and A.V. Nazarenko for their assistance in the experimental work.

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Authors and Affiliations

  1. Southern Scientific Center, Russian Academy of Sciences, pr. Chekhova 41, 344006, Rostov-on-Don, Russia

    A. V. Pavlenko, D. V. Stryukov, A. S. Anokhin, A. P. Kovtun & B. Ya. Sevast’yanov

  2. Research Institute of Physics, Southern Federal University, pr. Stachki 194, 344090, Rostov-on-Don, Russia

    A. V. Pavlenko

  3. Solid State Electronics Section, Cinvestav-IPN, Av. Instituto Politecnico Nacional, 2508, Mexico DF, Cinvestav-IPN, #, Mexico

    Yu. A. Kudryavtsev

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  1. A. V. Pavlenko
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  2. Yu. A. Kudryavtsev
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  3. D. V. Stryukov
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  4. A. S. Anokhin
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  5. A. P. Kovtun
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  6. B. Ya. Sevast’yanov
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Correspondence to A. V. Pavlenko.

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Translated by O. Tsarev

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Pavlenko, A.V., Kudryavtsev, Y.A., Stryukov, D.V. et al. Composition, Structure, and Dielectric Characteristics of (Sr0.5Ba0.5)Nb2O6/Pt(111)/Si(001) Films. Inorg Mater 55, 167–172 (2019). https://doi.org/10.1134/S0020168519020109

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