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Electrical Properties of High-Quality Synthetic Boron-Doped Diamond Single Crystals and Schottky Barrier Diodes on Their Basis

  • THE STUDY OF STRUCTURE AND PROPERTIES PHYSICAL METHODS FOR STUDY AND CONTROL
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Abstract

The temperature dependences of the specific resistance and Hall coefficient of high-quality synthetic boron-doped diamond single crystals grown via a high-pressure high-temperature method are studied. The concentration of acceptors in the (001) cut plates was varied in a range of 2 × 1015–3 × 1017 cm–3 by varying the concentration of boron in the growth mixture (0.0004–0.04 at %). Thin rectangular plates with the uniform concentration of boron and free from extended structural defects are cut out by a laser after the X-ray topography and mapping of UV luminescence. The concentrations of donors and acceptors in the samples are calculated from the data of the Hall effect and capacitance–voltage characteristics. The obtained results correlate with the concentration of boron in the growth mixture. The minimum compensation ratio of acceptors with donors (below 1%) is observed in the crystals grown with the concentration of boron in the growth mixture of 0.002 at %. The ratio increases when the amount of boron is increased or decreased. The samples grown at such a concentration of boron have the maximum mobility of charge carriers (2200 cm2/(V s) at T = 300 K and 7200 cm2/(V s) at T = 180 K). The phonon scattering of holes dominates throughout the range of temperatures (180–800 K), while the scattering by point defects (neutral and ionized atoms of the impurity) is insignificant. The diamond crystals which are grown from a mixture containing 0.0005–0.002 at % boron and have perfect quality and a lattice mechanism of scattering can be considered as a reference semiconductor.

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REFERENCES

  1. Polyakov, S.N., Denisov, V.N., Kuzmin, N.V., Kuznetsov, M.S., Martyushov, S.Y., Nosukhin, S.A., Terentiev, S.A., and Blank, V.D., Characterization of top-quality type IIa synthetic diamonds for new x-ray optics, Diamond Relat. Mater., 2011, vol. 20, pp. 726–728.

    Article  CAS  Google Scholar 

  2. Feve, J.-P.M., Shortoff, K.E., Bohn, M.J., and Brasseur, J.K., High average power diamond Raman laser, Opt. Express, 2011, vol. 19, pp. 913–922.

    Article  CAS  PubMed  Google Scholar 

  3. Shvyd’ko, Y., Stoupin, S., Blank, V., and Terentyev, S., Near-100% Bragg reflectivity of x-rays, Nat. Photonics, 2011, vol. 5, pp. 539–542.

    Article  CAS  Google Scholar 

  4. Blank, V.D., Bormashov, V.S., Tarelkin, S.A., Buga, S.G., Kuznetsov, M.S., Teteruk, D.V., Kornilov, N.V., Terentiev, S.A., and Volkov, A.P., Power high-voltage and fast response Schottky barrier diamond diodes, Diamond Relat. Mater., 2015, vol. 57, pp. 32–36.

    Article  CAS  Google Scholar 

  5. Tarelkin, S., Bormashov, V., Buga, S., Volkov, A., Teteruk, D., Kornilov, N., Kuznetsov, M., Terentiev, S., Golovanov, A., and Blank, V., Power diamond vertical Schottky barrier diode with 10 A forward current, Phys. Status Solidi A, 2015, vol. 212, pp. 2621–2627.

    Article  CAS  Google Scholar 

  6. Polyakov, A., Smirnov, N., Tarelkin, S., Govorkov, A., Bormashov, V., Kuznetsov, M., Teteruk, D., Buga, S., Kornilov, N., and Lee, I.-H., Electrical properties of diamond platinum vertical Schottky barrier diodes, Mater. Today: Proc., 2016, vol. 3, pp. S159–S164.

    Article  Google Scholar 

  7. Tapper, R.J., Diamond detectors in particle physics, Rep. Prog. Phys., 2000, vol. 63, pp. 1273–1316.

    Article  CAS  Google Scholar 

  8. Bruzzi, M., Bucciolini, M., Nava, F., Pini, S., and Russo, S., Advanced materials in radiation dosimetry, Nucl. Instrum. Methods Phys. Res., Sect. A, 2002, vol. 485, pp. 172–177.

    CAS  Google Scholar 

  9. Bachmair, F., Bäni, L., Bergonzo, P., Caylar, B., Forcolin, G., Haughton, I., Hits, D., Kagan H., Kass, R., Li, L., Oh, A., Phan, S., Pomorski, M., Smith, D.S., Tyzhnevyi, V., et al., A 3D diamond detector for particle tracking, Nucl. Instrum. Methods Phys. Res., Sect. A, 2015, vol. 786, pp. 97–104.

    CAS  Google Scholar 

  10. Amosov, V.N., Azizov, E.A., Blank, V.D., Gvozdeva, N.M., Kornilov, N.V., Krasilnikov, A.V., Kuznetsov, M.S., Meshchaninov, S.A., Nosukhin, S.A., Rodionov, N.B., and Terent’ev, S.A., Development of ionizing radiation detectors based on synthetic diamond material for the nuclear power industry, Instrum. Exp. Tech., 2010, vol. 53, pp. 196–203.

    Article  CAS  Google Scholar 

  11. Bormashov, V., Troschiev, S., Volkov, A., Tarelkin, S., Korostylev, E., Golovanov, A., Kuznetsov, M., Teteruk, D., Kornilov, N., Terentiev, S., Buga, S., and Blank, V., Development of nuclear microbattery prototype based on Schottky barrier diamond diodes, Phys. Status Solidi A, 2015, vol. 212, pp. 2539–2547.

    Article  CAS  Google Scholar 

  12. Delfaure, C., Pomorski, M., de Sanoit, J., Bergonzo, P., and Saada, S., Single crystal CVD diamond membranes for betavoltaic cells, Appl. Phys. Lett., 2016, vol. 108, art. ID 252105.

    Article  CAS  Google Scholar 

  13. Thonke, K., The boron acceptor in diamond, Semicond. Sci. Technol., 2003, vol. 18, pp. S20–S26.

    Article  CAS  Google Scholar 

  14. Pernot, J., Volpe, P.N., Omnès, F., Muret, P., and Teraji, T., Hall hole mobility in boron-doped homoepitaxial diamond, Phys. Rev. B, 2010, vol. 81, art. ID 205203.

    Article  CAS  Google Scholar 

  15. Prikhodko, D., Tarelkin, S., Bormashov, V., Golovanov, A., Kuznetsov, M., Teteruk, D., Volkov, A., and Buga, S., Thermal conductivity of synthetic boron-doped single-crystal HPHT diamond from 20 to 400 K, MRS Commun., 2016, vol. 6, no. 2, pp. 71–76.

    Article  CAS  Google Scholar 

  16. Wentorf, R.H., Some studies of diamond growth rates, J. Phys. Chem., 1971, vol. 75, pp. 1833–1837.

    Article  CAS  Google Scholar 

  17. Achard, J., Tallaire, A., Sussmann, R., Silva, F., and Gicquel, A., The control of growth parameters in the synthesis of high-quality single crystalline diamond by CVD, J. Cryst. Growth, 2005, vol. 284, pp. 396–405.

    Article  CAS  Google Scholar 

  18. Barjon, J., Chikoidze, E., Jomard, F., Dumont, Y., Pinault-Thaury, M.-A., Issaoui, R., Brinza, O., Achard, J., and Silva, F., Homoepitaxial boron-doped diamond with very low compensation, Phys. Status Solidi A, 2012, vol. 209, pp. 1750–1753.

    Article  CAS  Google Scholar 

  19. Wentorf, R.H. and Bovenkerk, H.P., Preparation of semiconducting diamonds, J. Chem. Phys., 1962, vol. 36, no. 1987.

  20. Blank, V.D., Kuznetsov, M.S., Nosukhin, S.A., Terentiev, S.A., and Denisov, V.N., The influence of crystallization temperature and boron concentration in growth environment on its distribution in growth sectors of type IIb diamond, Diamond Relat. Mater., 2007, vol. 16, pp. 800–804.

    Article  CAS  Google Scholar 

  21. van der Pauw, L.J., A method of measuring specific resistivity and Hall Effect of discs of arbitrary shape, Philips Res. Rep., 1958, vol. 13, pp. 1–9.

    Google Scholar 

  22. Schroder, D.K., Semiconductor Material and Device Characterization, New York: Wiley, 2006.

    Google Scholar 

  23. Mamin, R. and Inushima, T., Conductivity in boron-doped diamond, Phys. Rev. B, 2001, vol. 63.

  24. Denisov, V.N., Mavrin, B.N., Polyakov, S.N., Kuznetsov, M.S., Terentiev, S.A., and Blank, V.D., First observation of electronic structure of the even parity boron acceptor states in diamond, Phys. Lett. A, 2012, vol. 376, pp. 2812–2815.

    Article  CAS  Google Scholar 

  25. Teteruk, D.V., Tarelkin, S.A., Bormashov, V.S., Volkov, A.P., Kornilov, N.V., and Terent’ev, S.A., Doping of a diamond grown by chemical vapor deposition, Izv. Vyssh. Uchebn. Zaved., Khim. Khim. Tekhnol., 2014, vol. 57, pp. 56–58.

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ACKNOWLEDGMENTS

This work was financially supported by the Ministry of Education and Science of the Russian Federation (project ID RFMEFI59317X0007; the agreement no. 14.593.21.0007); the work was done using the Shared Research Facilities “Research of Nanostructured, Carbon and Superhard Materials” FSBI TISNCM).

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Authors and Affiliations

  1. Technological Institute for Superhard and Novel Carbon Materials, 142190, Troitsk, Moscow, Russia

    V. S. Bormashov, S. A. Tarelkin, S. G. Buga, A. P. Volkov, A. V. Golovanov, M. S. Kuznetsov, N. V. Kornilov, D. V. Teteruk, N. V. Luparev, S. A. Terent’ev & V. D. Blank

  2. Moscow Institute of Physics and Technology, Dolgoprudnyi, 141701, Moscow, Russia

    S. A. Tarelkin, S. G. Buga, A. V. Golovanov & V. D. Blank

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  1. V. S. Bormashov
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  2. S. A. Tarelkin
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  3. S. G. Buga
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  4. A. P. Volkov
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  5. A. V. Golovanov
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  6. M. S. Kuznetsov
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  7. N. V. Kornilov
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  8. D. V. Teteruk
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  9. N. V. Luparev
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  10. S. A. Terent’ev
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  11. V. D. Blank
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Correspondence to S. G. Buga.

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Translated by E. Boltukhina

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Bormashov, V.S., Tarelkin, S.A., Buga, S.G. et al. Electrical Properties of High-Quality Synthetic Boron-Doped Diamond Single Crystals and Schottky Barrier Diodes on Their Basis. Inorg Mater 54, 1469–1476 (2018). https://doi.org/10.1134/S0020168518150037

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  • DOI: https://doi.org/10.1134/S0020168518150037

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