Skip to main content
SpringerLink
Log in

Growth of Gallium Nitride Micro- and Nanocrystallites on the Surface of Gallium Arsenide

  • Published:
Inorganic Materials Aims and scope

Abstract—

As a result of heterosegregation, we have obtained a gallium nitride phase, including oriented micro- and nanocrystallites, on the surface of gallium arsenide. The mechanism underlying the growth of crystallites of the surface phase has been analyzed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.

Similar content being viewed by others

REFERENCES

  1. Tomashpolsky, Yu.Ya., Poverkhnostnaya avtosegregatsiya v khimicheskikh soedineniyakh (Surface Autosegregation in Chemical Compounds), Moscow: Nauchnyi Mir, 2013.

    Google Scholar 

  2. Akchurin, R.Kh. and Marmalyuk, A.A., Gallium nitride—a promising electronic material: 1. Fundamental properties of gallium nitride, Materialovedenie, 1999, no. 9, pp. 950–962.

  3. Okumura Hajime, Present status and future prospect of widegap semiconductor high power devices, Jpn. J. Appl. Phys., 2006, pp. 7565–7580.

  4. Khanna, S.M., Webb, J., Tang, H., Houdayer, A.J., and Carlone, C., 2 MeV proton radiation damage studies of GaN films through low temperature photoluminescence spectroscopy measurements, IEEE Trans. Nucl. Sci., 2000, vol. 47, pp. 2322–2328.

    Article  CAS  Google Scholar 

  5. Tomashpolsky, Yu.Ya., Matyuk, V.M., and Sadovskaya, N.V., Heterosegregation on the surface of a gallium arsenide single crystal: gallium nitride phase formation in nitrogen- and argon-gas flows, J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech., 2015, no. 3, pp. 581–589. doi 10.1134/S1027451015030350

  6. Tomashpolsky, Yu.Ya., Sadovskaya, N.V., and Grigorieva, G.A., Nanoscale peculiarities of the thermally stimulated surface autosegregation of covalent crystals: gallium arsenide, J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech., 2013, vol. 7, no. 5, pp. 900–906.

    Article  CAS  Google Scholar 

  7. Chernov, A.A., Givargizov, E.I., Bagdasarov, Kh.S., et al., Obrazovanie kristallov (Crystal Formation), vol. 3 of Sovremennaya kristallografiya (Modern Crystallography), Vainshtein, B.K., Chernov, A.A., and Shuvalov, L.A., Eds., Moscow: Nauka, 1980.

Download references

Author information

Authors and Affiliations

  1. Karpov Institute of Physical Chemistry (Russian Federation State Scientific Center), ul. Vorontsovo pole 10, 105064, Moscow, Russia

    Yu. Ya. Tomashpolsky, V. M. Matyuk & N. V. Sadovskaya

Authors
  1. Yu. Ya. Tomashpolsky
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. M. Matyuk
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. N. V. Sadovskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Yu. Ya. Tomashpolsky.

Additional information

Translated by O. Tsarev

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Tomashpolsky, Y.Y., Matyuk, V.M. & Sadovskaya, N.V. Growth of Gallium Nitride Micro- and Nanocrystallites on the Surface of Gallium Arsenide. Inorg Mater 54, 1099–1102 (2018). https://doi.org/10.1134/S0020168518110146

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S0020168518110146

Keywords:

Search

Navigation