Abstract
The crystallization of amorphous Sn-doped TlInS2 films into three polymorphs has been studied by kinematic electron diffraction. The results demonstrate that the crystallization of 30-nm-thick amorphous films produced by thermal evaporation in high vacuum can be described by the Avrami–Kolmogorov equation: Vτ = V0[1–exp(–kτm)]. Kinematic electron diffraction patterns of the TlIn1–хSnxS2 films have been used to assess the effect of doping with Sn on the growth dimensionality and the activation energy for the crystallization of the amorphous films and the unit-cell parameters of the resultant crystalline materials. Doping extends the temperature range and effective activation energy for the crystallization of the amorphous films.
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Original Russian Text © E.Sh. Alekperov, 2018, published in Neorganicheskie Materialy, 2018, Vol. 54, No. 8.
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Alekperov, E.S. Effect of Sn Doping on the Crystallization Kinetics of Amorphous TlInS2 Films. Inorg Mater 54, 767–771 (2018). https://doi.org/10.1134/S0020168518080010
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DOI: https://doi.org/10.1134/S0020168518080010