Abstract
The micro-and nanomorphology and local composition of gallium nitride (GaN) films produced by four different procedures have been studied with the aim of detecting autosegregation phenomena. As a result, a complex autosegregation picture has been demonstrated and discussed. Independent of the growth procedure, all of the gallium nitride films have nonstoichiometric chemical compositions (gallium deficiency), with a degree of nonstoichiometry ranging from ~0.30 to <0.10. We discuss the segregation mechanism, which presumably involves predominant selective diffusion of nitrogen atoms to the surface.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Tomashpolsky, Yu.Ya., Poverkhnostnaya avtosegregatsiya v khimicheskikh soedineniyakh (Surface Autosegregation in Chemical Compounds), Moscow: Nauchnyi Mir, 2013.
Akchurin, R.Kh. and Marmalyuk, A.A., Gallium nitride—a promising electronic material: 1. Fundamental properties of gallium nitride, Materialovedenie, 1999, no. 9, pp. 950–962.
Okumura Hajime, Present status and future prospect of widegap semiconductor high power devices, Jpn. J. Appl. Phys., 2006, pp. 7565–7580.
Khanna, S.M., Webb, J., Tang, H., Houdayer, A.J., and Carlone, C., 2 MeV proton radiation damage studies of GaN films through low temperature photoluminescence spectroscopy measurements, IEEE Trans. Nucl. Sci., 2000, vol. 47, pp. 2322–2328.
Pierson, H.O., Handbook of Chemical Vapor Deposition (CVD): Principles, Technology, and Applications, Norwich: William Andrew, 1992.
Matlox, D.M., Handbook of Physical Vapor Deposition (PVD): Processing, Film Formation, Adhesion, Surface Preparation, and Contamination Control, Westwood: Noyes Publications, 1998.
Gusev, A.I., Nanomaterialy, nanostruktury, nanotekhnologii (Nanomaterials, Nanostructures, and Nanotechnologies), Moscow: Fizmatlit, 2007.
Sibirev, N.V., Cirlin, G.E., Dubrovskii, V.G., et al., Effect of diffusion from a lateral surface on the rate of GaN nanowire growth, Semiconductors, 2012, vol. 4, no. 6, pp. 838–841.
Zhmerik, V.P., Plasma-assisted molecular beam epitaxy of optoelectronic heterostructures based on (AlGaIn)N wide-band-gap compounds, Doctoral (Phys.–Math.) Dissertation, S.-Peterburg: Ioffe Physicotechnical Institute, Russ. Acad. Sci., 2012.
Sukach, G.A., Kidalov, V.V., Kotlyarevskii, M.B., et al., Structure and composition of gallium nitride films produced by processing gallium arsenide single crystals in atomic nitrogen, Tech. Phys., 2003, vol. 48, no. 4, pp. 437–440.
Butcher, K.S.A., Wintrebert Et Fuquet, M.-P.F., Chen, P.P.T., et al., RF Patent 2391444, 2010.
Tomashpolsky, Yu.Ya., Matyuk, V.M., and Sadovskaya, N.V., RF Patent 2578870, 2016.
Tomashpolsky, Yu.Ya., Sadovskaya, N.V., and Grigorieva, G.A., Nanoscale peculiarities of the thermally stimulated surface autosegregation of covalent crystals: gallium arsenide, J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech., 2013, vol. 7, no. 5, pp. 900–906.
Rogozin, I.V. and Kotlyarevsky, M.B., X-ray photoelectron spectroscopy of gallium nitride films grown by radical-beam gettering epitaxy, Semiconductors, 2007, vol. 41, no. 5, pp. 555–559.
Munir, Z.A. and Searcy, A.W., Activation energy for the sublimation of gallium nitride, J. Chem. Phys., 1965, vol. 42, pp. 4223–4328.
Mott, N.F. and Davis, E.A., Electronic Processes in Non-Crystalline Materials, Oxford: Clarendon, 1971.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © Yu.Ya. Tomashpolsky, V.M. Matyuk, N.V. Sadovskaya, 2018, published in Neorganicheskie Materialy, 2018, Vol. 54, No. 1, pp. 29–34.
Rights and permissions
About this article
Cite this article
Tomashpolsky, Y.Y., Matyuk, V.M. & Sadovskaya, N.V. Effect of Gallium Nitride Film Growth Conditions on Surface Segregation. Inorg Mater 54, 26–31 (2018). https://doi.org/10.1134/S0020168518010168
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S0020168518010168