Abstract
A process has been developed for the liquid phase epitaxy of mesa stripe buried crescent InP/InGaAsP/InP heterostructures with a p–n–p–n/ZnSe leakage current-blocking structure. The salient feature of the process is a discontinuous mesa stripe which alternates with the structure of blocking layers. This technology allows one to fabricate linear edge-emitting diodes, mounted with the mesa stripe down or up, with an emission wavelength λ = 1.3–1.5 μm, high reproducibility, the possibility of coupling more than 50 μW of optical power into single-mode fiber at a current of 100 mA, an emission bandwidth of about 60 nm, and essentially negligible Fabry–Perot modulation.
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Original Russian Text © M.G. Vasil’ev, A.M. Vasil’ev, Yu.O. Kostin, A.A. Shelyakin, A.D. Izotov, 2017, published in Neorganicheskie Materialy, 2017, Vol. 53, No. 11, pp. 1189–1193.
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Vasil’ev, M.G., Vasil’ev, A.M., Kostin, Y.O. et al. Buried crescent InP/InGaAsP/InP heterostructure on p-InP for linear edge-emitting diodes. Inorg Mater 53, 1170–1173 (2017). https://doi.org/10.1134/S0020168517110164
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DOI: https://doi.org/10.1134/S0020168517110164