Abstract
The kinetics and mechanism of stepwise transformations underlying the isothermal bulk crystallization of As2Se3Sn x (x = 0.26, 0.40, 0.55) semiconductor glasses in the temperature range 210–310°C have been studied using 119Sn Mössbauer spectroscopy, X-ray diffraction, density and electrical conductivity measurements, and microhardness tests. The results demonstrate that small particles of the primary phase SnSe initiate heterogeneous nucleation and two-dimensional growth of crystals of the secondary, major phase As2Se3.
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Original Russian Text © E.V. Shkol’nikov, 2017, published in Neorganicheskie Materialy, 2017, Vol. 53, No. 11, pp. 1218–1224.
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Shkol’nikov, E.V. Kinetics and mechanism of the isothermal bulk crystallization of As2Se3Sn x (x ≤ 0.55) glasses. Inorg Mater 53, 1195–1200 (2017). https://doi.org/10.1134/S0020168517110115
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DOI: https://doi.org/10.1134/S0020168517110115