Abstract
We have studied the chemical dissolution of InAs, InSb, GaAs, and GaSb crystals in (NH4)2Cr2O7–HBr–C6H8O7 solutions. The dissolution rate of the crystals has been measured as a function of etchant composition, and the kinetics of the chemical interaction of the semiconductors with solutions have been investigated in detail. The dissolution rate has been shown to be diffusion-limited. Citric acid helps to reduce the etch rate and improves the polishing performance of the etching solutions.
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Original Russian Text © I.V. Levchenko, I.B. Stratiychuk, V.N. Tomashyk, G.P. Malanych, A.S. Stanetskaya, A.A. Korchevoi, 2017, published in Neorganicheskie Materialy, 2017, Vol. 53, No. 11, pp. 1137–1142.
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Levchenko, I.V., Stratiychuk, I.B., Tomashyk, V.N. et al. Chemical interaction of InAs, InSb, GaAs, and GaSb crystal surfaces with (NH4)2Cr2O7–HBr–citric acid etching solutions. Inorg Mater 53, 1109–1114 (2017). https://doi.org/10.1134/S002016851711005X
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DOI: https://doi.org/10.1134/S002016851711005X