Abstract
An approach has been proposed for producing “negative” whiskers in Si wafers which is based on the thermal migration of silicon–metal (Si + M) melt droplets in the field of a transverse temperature gradient. We have obtained regular systems of negative whiskers in the form of through holes in Si {111} wafers. It has been shown that the thermal migration of Si + M melt droplets is driven by the difference between the chemical potentials of Si in the liquid and crystalline phases, which arises from the difference in curvature between the liquid/vapor and solid/liquid interfaces and leads to Si dissolution and desorption.
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Original Russian Text © V.A. Nebol’sin, A.I. Dunaev, A.Yu. Vorob’ev, A.S. Samofalova, V.V. Zenin, 2017, published in Neorganicheskie Materialy, 2017, Vol. 53, No. 8, pp. 789–795.
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Nebol’sin, V.A., Dunaev, A.I., Vorob’ev, A.Y. et al. Formation of “negative” silicon whiskers. Inorg Mater 53, 775–780 (2017). https://doi.org/10.1134/S002016851708012X
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DOI: https://doi.org/10.1134/S002016851708012X