Abstract
We have studied the nature and kinetics of the chemical interaction of InAs, InSb, GaAs, and GaSb crystals with aqueous (NH4)2Cr2O7–HBr solutions. The dissolution rate of the crystals has been measured as a function of etchant composition, solution stirring rate, and temperature. The results demonstrate that the dissolution rate of the semiconductors is diffusion-limited. We have determined the composition ranges of polishing solutions, optimized their compositions, and found conditions for the dynamic chemical polishing of the semiconductors. Ultrasmooth polished semiconductor surfaces have been obtained, with R a ≈ 1 nm.
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Original Russian Text © I.V. Levchenko, I.B. Stratiychuk, V.N. Tomashyk, G.P. Malanych, A.S. Stanetskaya, 2017, published in Neorganicheskie Materialy, 2017, Vol. 53, No. 8, pp. 796–800.
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Levchenko, I.V., Stratiychuk, I.B., Tomashyk, V.N. et al. Chemical interaction of InAs, InSb, GaAs, and GaSb crystals with aqueous (NH4)2Cr2O7–HBr solutions. Inorg Mater 53, 781–785 (2017). https://doi.org/10.1134/S0020168517080106
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DOI: https://doi.org/10.1134/S0020168517080106