Skip to main content
SpringerLink
Log in

A model for calculating the composition of GaAs x P1–x solid solutions under metalorganic vapor phase epitaxy conditions

  • Published:
Inorganic Materials Aims and scope

Abstract

A model is proposed for calculating the composition of GaAs x P1–x solid solutions, based on the iterative determination of the equilibrium partial pressures of the pyrolysis products of the starting reagents, followed by calculation of the composition of the solid solution in an adsorption–desorption model. The proposed model ensures good agreement between calculation results and experimental data.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Vasil’ev, M.G., Vasil’ev, A.M., Izotov, A.D., and Shelyakin, A.A., Laser diode for remote sensing of methane, Inorg. Mater., 2012, vol. 48, no. 3, pp. 252–257.

    Article  Google Scholar 

  2. Samuelson, L., Omling, P., and Grimmeiss, H.G., Alloying mechanisms in MOVPE GaAs1–xPx, J. Cryst. Growth, 1983, vol. 61, pp. 425–426.

    Article  CAS  Google Scholar 

  3. Leys, M.R., Titze, H., Samuelson, L., and Petruzzello, J., Growth and characterization of strained layers of GaAs1–xPx, J. Cryst. Growth, 1988, vol. 93, p.504.

    Article  CAS  Google Scholar 

  4. Koukitu, A. and Seki, H., Thermodynamic analysis of the MOVPE growth of quaternary III–V alloy semiconductors, J. Cryst. Growth, 1986, vol. 76, pp. 233–242.

    Article  CAS  Google Scholar 

  5. Seki, H. and Koukitu, A., Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductors, J. Cryst. Growth, 1986, vol. 74, pp. 172–180.

    Article  CAS  Google Scholar 

  6. Ban, V.S., Gossenberger, J.F., and Tietjen, J.J., Influence of deposition temperature on composition and growth rate of GaAs1–xPx layers, J. Appl. Phys., 1972, vol. 43, pp. 2471–2477.

    Article  CAS  Google Scholar 

  7. Jordan, A.S. and Robertson, A., Copyrolysis of AsH3 and PH3 in the epitaxial growth of ternary and quaternary III–V alloys, J. Cryst. Growth, 1994, vol. 137, pp. 224–230.

    Article  CAS  Google Scholar 

  8. Pellegrino, S. and Vitali, L., Deposition of InGaAsP alloys on GaAs by low pressure metalorganic vapor phase epitaxy: theory and experiments, J. Electron. Mater., 1996, vol. 25, no. 3, pp. 519–525.

    Article  CAS  Google Scholar 

  9. Chen, C.H., Kao, D.S., and Stringfellow, G.B., Use of tertiarybutylphosphine for the growth of InP and GaAs1–xPx, J. Electron. Mater., 1988, vol. 17, pp. 67–73.

    Article  CAS  Google Scholar 

  10. Jou, M.J. and Stringfellow, G.B., Organometallic vapor phase epitaxial growth studies of GaP1–xSbx and InP1–xSbx, J. Cryst. Growth, 1989, vol. 98, pp. 679–689.

    Article  CAS  Google Scholar 

  11. Asai, T. and Dandy, D.S., Thermodynamic analysis of III–V semiconductor alloys grown by metalorganic vapor phase epitaxy, J. Appl. Phys., 2000, vol. 88, no. 7, pp. 4407–4416.

    Article  CAS  Google Scholar 

  12. Korn, G.A. and Korn, T.M., Mathematical Handbook for Scientists and Engineers, New York: McGraw-Hill, 1968, 2nd ed., p. 1130.

    Google Scholar 

  13. Ihsan Barin, Thermochemical Data of Pure Substances, Weinheim: VCH Verlagsgesellschaft, 1995, 3rd ed., p. 1885.

    Google Scholar 

  14. Chase, M.W., et al., JANAF Thermochemical Tables, Midland: Dow Chemical, 1985, 3rd ed.

    Google Scholar 

  15. Chase, M.W., Jr., NIST–JANAF thermochemical tables, fourth edition, J. Phys. Chem. Ref. Data, 1998.

    Google Scholar 

  16. Lodders, K., Revised thermochemical properties phosphinidene (PH), phosphine (PH3), phosphorus nitride (PN), and magnesium phosphate (Mg3P2O8), J. Phys. Chem. Ref. Data, 1999, vol. 28, no. 6, pp. 1705–1712.

    Article  CAS  Google Scholar 

  17. Leitner, J. and Mikulec, J., Thermodynamic analysis of the deposition of GaAs epitaxial layers prepared by the MOCVD method, J. Cryst. Growth, 1991, vol. 112, pp. 437–444.

    Article  CAS  Google Scholar 

  18. Landolt–Bornstein, Numerical Data and Functional Relationships in Science and Technology, Berlin: Springer, 1982, p.620.

    Google Scholar 

  19. Samuelson, L., Omling, R., Titze, H., and Grimmeiss, H.R., Electrical and optical properties of deep levels in MPVPE grown GaAs, J. Cryst. Growth, 1981, vol. 55, pp. 164–172.

    Article  CAS  Google Scholar 

  20. Larsen, C.A. and Stringfellow, G.B., Decomposition kinetics of OMVPE precursors, J. Cryst. Growth, 1986, vol. 75, pp. 247–254.

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Fine Chemical Technologies, Moscow Technological University, pr. Vernadskogo 86, Moscow, 119571, Russia

    A. D. Maksimov & V. Yu. Eistrikh-Geller

  2. AO Stel’makh Polyus Research Institute, ul. Vvedenskogo 3/1, Moscow, 117342, Russia

    A. A. Marmalyuk, M. A. Ladugin, T. A. Bagaev, P. V. Gorlachuk & I. V. Yarotskaya

Authors
  1. A. D. Maksimov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. Yu. Eistrikh-Geller
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. A. Marmalyuk
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. A. Ladugin
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. T. A. Bagaev
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. P. V. Gorlachuk
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. I. V. Yarotskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. D. Maksimov.

Additional information

Original Russian Text © A.D. Maksimov, V.Yu. Eistrikh-Geller, A.A. Marmalyuk, M.A. Ladugin, T.A. Bagaev, P.V. Gorlachuk, I.V. Yarotskaya, 2017, published in Neorganicheskie Materialy, 2017, Vol. 53, No. 4, pp. 362–368.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Maksimov, A.D., Eistrikh-Geller, V.Y., Marmalyuk, A.A. et al. A model for calculating the composition of GaAs x P1–x solid solutions under metalorganic vapor phase epitaxy conditions. Inorg Mater 53, 369–375 (2017). https://doi.org/10.1134/S0020168517040124

Download citation

  • Received:

  • Revised:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S0020168517040124

Keywords

Search

Navigation