Abstract
We demonstrate that, in the case of InSb〈Mn〉 synthesis through quenching from the liquid state, a second phase in InSb precipitates at higher manganese concentrations than in the case of Czochralski growth. The observed concentration delay of second-phase precipitation can be accounted for in terms of both the complex, multistep formation of Lomer–Cottrell sessile dislocations, accompanying the crystallization of III–V compound semiconductors, and diffusion hindrances to dopant motion to dislocations, associated with the high quenching rate and the presence of other lattice defects.
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Original Russian Text © V.P. Sanygin, O.N. Pashkova, A.D. Izotov, 2017, published in Neorganicheskie Materialy, 2017, Vol. 53, No. 2, pp. 119–125.
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Sanygin, V.P., Pashkova, O.N. & Izotov, A.D. Solubility limits of manganese in InSb under equilibrium and nonequilibrium synthesis conditions. Inorg Mater 53, 135–141 (2017). https://doi.org/10.1134/S002016851702011X
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DOI: https://doi.org/10.1134/S002016851702011X