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Electronic structure and exchange interaction in Ga1–x Mn x As and In1–x Mn x Sb magnetic semiconductors

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Abstract

We have calculated the electronic structure of Ga1–x Mn x As and In1–x Mn x Sb diluted magnetic semiconductors and shown that, in agreement with recent photoelectron spectroscopy data, the Mn 4s and Mn 3d orbitals are hybridized with the valence band of the host semiconductor. A new approach has been developed for calculating exchange interaction in diluted magnetic semiconductors, which is based on the spin polarization of s-electrons at a magnetic center due to single-center exchange s–d matrix elements. The magnitude of exchange interaction calculated using Hartree–Fock atomic wave functions and the electrondensity-functional approach agrees well with previous data.

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Authors and Affiliations

  1. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia

    V. G. Yarzhemsky, S. V. Murashov & A. D. Izotov

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  1. V. G. Yarzhemsky
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  2. S. V. Murashov
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  3. A. D. Izotov
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Correspondence to A. D. Izotov.

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Original Russian Text © V.G. Yarzhemsky, S.V. Murashov, A.D. Izotov, 2016, published in Neorganicheskie Materialy, 2016, Vol. 52, No. 2, pp. 119–123.

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Yarzhemsky, V.G., Murashov, S.V. & Izotov, A.D. Electronic structure and exchange interaction in Ga1–x Mn x As and In1–x Mn x Sb magnetic semiconductors. Inorg Mater 52, 89–93 (2016). https://doi.org/10.1134/S0020168516020175

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  • DOI: https://doi.org/10.1134/S0020168516020175

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