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Synthesis of thin silicon carbonitride films from hexamethyldisilazane in an inductively coupled plasma reactor

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Abstract

SiC x N y :H films have been grown by inductively coupled plasma chemical vapor deposition via hexamethyldisilazane decomposition at substrate temperatures from 50 to 450°C and rf powers from 100 to 500 W. The growth rate and physicochemical properties of the films (their elemental composition, refractive index, optical band gap, and optical transmittance) have been shown to be weak functions of process conditions. The process offers high stability, and the films are uniform in thickness over the entire substrate surface. The SiC x N y :H films have a polymer-like structure, high transmission, a refractive index near 2.0, and hardness of 8–9 GPa, which is typical of films produced from hexamethyldisilazane by low-temperature plasma deposition processes.

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References

  1. Fainer, N.I., Rumyantsev, Yu.M., and Kosinova, M.L., Functional nanocrystalline silicon carbonitride films, Khim. Interesakh Ustoich. Razvit., 2001, vol. 9, pp. 685–870.

    Google Scholar 

  2. Fainer, N.I., Kosinova, M.L., and Rumyantsev, Yu.M., Silicon and boron carbonitride thin films: growth, composition, and structure, Ross. Khim. Zh., 2001, vol. 45, no. 3, pp. 101–108.

    CAS  Google Scholar 

  3. Hoffmann, P., Fainer, N., Kosinova, M., Baake, O., and Ensinger, W., Compilation on synthesis, characterization and properties of silicon and boron carbonitride films, Silicon Carbide—Materials, Processing and Applications in Electronic Devices, Mukherjee, M., Ed., InTech, 2011, ch. 21, pp. 487–546.

    Google Scholar 

  4. Limmanee, A., Otsubo, M., Sugiura, T., Sato, T., Miyajima, S., Yamada, A., and Konagai, M., Effect of thermal annealing on the properties of a-SiCN:H films by hot wire chemical vapor deposition using hexamethyldisilazane, Thin Solid Films, 2008, vol. 516, pp. 652–655.

    Article  CAS  Google Scholar 

  5. Ray, S.K., Maiti, C.K., and Chakrabarti, N.B., Lowtemperature deposition of dielectric films by microwave plasma enhanced decomposition of hexamethyldisilazane, J. Electron. Mater., 1991, vol. 20, no. 11, pp. 907–913.

    Article  CAS  Google Scholar 

  6. Bulou, S., Le Brizoual, L., Miska, P., de Poucques, L., Hugon, R., Belmahi, M., and Bougdira, J., Structural and optical properties of a-SiCN thin film synthesised in a microwave plasma at constant temperature and different flow of CH4 added to HMDSN/N2/Ar mixture, Surf. Coat. Technol., 2011, vol. 205, pp. 214–217.

    Article  Google Scholar 

  7. Sukhanov, Ya.N., Ershov, A.P., Rudenko, K.V., and Orlikovsky, A.A., Comparative study of inductively coupled and microwave BF3 plasmas for microelectronic technology applications, Proc. SPIE–Int. Soc. Opt. Eng., 2004, vol. 5401, pp. 55–63.

    Google Scholar 

  8. Rudenko, K.V., Diagnostics of plasma processing steps in microand nanoelectronics, Extended Abstract of Doctoral (Phys.–Math.) Dissertation, Moscow: Inst. of Physics and Technology, 2007.

    Google Scholar 

  9. Kshirsagar, A., Nyaupane, P., Bodasc, D., Duttagupta, S.P., and Gangal, S.A., Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD, Appl. Surf. Sci., 2011, vol. 257, pp. 5052–5058.

    Article  CAS  Google Scholar 

  10. Fainer, N.I., Kosinova, M.L., Maximovsky, E.A., Rumyantsev, Yu.M., Kuznetsov, F.A., Kesler, V.G., and Kirienko, V.V., Study of the structure and phase composition of nanocrystalline silicon oxynitride films synthesized by ICP-CVD, Nucl. Instrum. Methods Phys. Res., 2005, vol. 543, pp. 134–138.

    Article  CAS  Google Scholar 

  11. Orlikovsky, A.A., Rudenko, K.V., and Averkin, S.N., Fine-line plasma-enhanced processes on the basis of a set of pilot units with a scalable inductively coupled plasma source for use in microelectronics, High Energy Chem., 2006, vol. 40, no. 3, pp. 182–193.

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 3, Novosibirsk, 630090, Russia

    Yu. M. Rumyantsev, M. N. Chagin, M. L. Kosinova & F. A. Kuznetsov

Authors
  1. Yu. M. Rumyantsev
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  2. M. N. Chagin
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  3. M. L. Kosinova
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  4. F. A. Kuznetsov
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Correspondence to Yu. M. Rumyantsev.

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Original Russian Text © Yu.M. Rumyantsev, M.N. Chagin, M.L. Kosinova, F.A. Kuznetsov, 2015, published in Neorganicheskie Materialy, 2015, Vol. 51, No. 9, pp. 974–980.

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Rumyantsev, Y.M., Chagin, M.N., Kosinova, M.L. et al. Synthesis of thin silicon carbonitride films from hexamethyldisilazane in an inductively coupled plasma reactor. Inorg Mater 51, 897–902 (2015). https://doi.org/10.1134/S0020168515090162

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  • DOI: https://doi.org/10.1134/S0020168515090162

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