Skip to main content
SpringerLink
Log in

Nanopore formation during electrolytic etching of silicon in hydrofluoric acid solutions

  • Published:
Inorganic Materials Aims and scope

Abstract

A stepwise scheme has been proposed for gaining insight into the nanopore formation process in silicon during electrolytic etching in hydrofluoric acid solutions. We have studied the influence of the concentration and nature of dopants (phosphorus, arsenic, and antimony) in silicon, current density, electric field strength, and etching time on the axial and radial pore sizes and the pore distribution density. The dopants have been shown to play a predominant role in the nanopore formation process. The shape and spatial orientation of nanopores in Si substrates with the (100) and (111) crystallographic orientations have been interpreted in terms of specific features of the electrochemical etching of silicon in hydrofluoric acid solutions, related to the action of the etching ion (HF2)−. The observed discrepancy between the experimentally determined and calculated radial nanopore sizes has been accounted for by the low probability ( 6.25%) of simultaneous interaction of the fluorine atoms of an (HF2)− ion with the corresponding silicon atoms located at vertices of a cube of the crystal lattice.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Ksenofontova, O.I., Vasin, A.V., Egorov, V.V., Bobyl’, A.V., Soldatenkov, F.Yu., Terukov, E.I., Ulin, V.P., and Kiselev, O.I., Porous silicon and its applications in biology and medicine, Tech. Phys., 2014, vol. 84, no. 1, pp. 66–77.

    Article  Google Scholar 

  2. Belous, A.O., Biomedical applications of porous silicon, Molodoi Uchenyi, 2013, no. 8, pp. 69–74.

    Google Scholar 

  3. Ishchenko, A.A., Fetisov, G.V., and Aslanov, P.A., Nanokremnii: svoistva, poluchenie, primenenie, metody ispol’zovaniya i kontrolya (Nanosilicon: Properties, Preparation, Applications, and Techniques for Use and Control), Moscow: FIZMATLIT, 2011.

    Google Scholar 

  4. Gavrilov, S.A. and Belov, A.N., Elektrokhimicheskie protsessy v tekhnologii mikro- i nanoelektroniki (Electrochemical Processes in Micro- and Nanoelectronics Technologies), Moscow: RIOR INFRA-M, 2014.

    Google Scholar 

  5. Yuzova, V.A., Levitskii, A.A., and Kharlashin, P.A., Advances in the preparation and characterization of porous silicon, J. Sib. Fed. Univ. Eng. Technol., 2011, vol. 4, pp. 92–112.

    Google Scholar 

  6. Churaman, W.A. and Currano, L., Preparation of nanoporous silicon, Army Res. Lab., 2012, p. 22.

    Google Scholar 

  7. Goryachev, D.N., Belyakov, L.V., and Sreselli, O.M., Electrolytic fabrication of porous silicon with the use of internal current source, Semiconductors, 2003, vol. 37, no. 4, pp. 477–481.

    Article  CAS  Google Scholar 

  8. Tynyshtykbaev, K.B., Ryabikin, Yu.A., Tokmoldin, S.Zh., Aitmukan, T., Rakymetov, B.A., and Vermenichev, R.B., Morphology of porous silicon after long-term internal current source anodic etching in electrolyte, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2010, vol. 36, no. 11, pp. 104–110.

    Google Scholar 

  9. Zalkind, Ya.G., Physicomathematical properties of silicon nanostructures as a technologically attractive material for microcircuit engineering, Cand. Sci. (Chem.) Dissertation, Moscow, 2006.

    Google Scholar 

  10. Abramova, E.N., Gvelesiani, A.A., Khort, A.M., and Yakovenko, A.G., Effect of the content of hydrogen fluoride in an etchant on the formation of nanopores in silicon during electrolytic etching, Russ. J. Inorg. Chem., 2014, vol. 59, no. 11, pp. 1328–1332.

    Article  CAS  Google Scholar 

  11. Kompan, M.E., Mechanism of primary self-organization of the regular structure of porous silicon, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2003, vol. 45, no. 5, pp. 1130–1134.

    Google Scholar 

  12. Akhmetov, N.S., Neorganicheskaya khimiya (Inorganic Chemistry), Moscow: Vysshaya Shkola, 1988.

    Google Scholar 

  13. Rabinovich, V.A. and Khavin, Z.Ya., Kratkii spravochnik khimika (Concise Chemist’s Handbook), Leningrad: Khimiya, 1977.

    Google Scholar 

  14. Seeger, K., Semiconductor Physics, New York: Springer, 1977.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Moscow State University, Moscow, 119899, Russia

    E. N. Abramova, A. M. Khort, A. G. Yakovenko & V. I. Shvets

Authors
  1. E. N. Abramova
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. M. Khort
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. G. Yakovenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. I. Shvets
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. G. Yakovenko.

Additional information

Original Russian Text © E.N. Abramova, A.M. Khort, A.G. Yakovenko, V.I. Shvets, 2015, published in Neorganicheskie Materialy, 2015, Vol. 51, No. 8, pp. 815–822.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Abramova, E.N., Khort, A.M., Yakovenko, A.G. et al. Nanopore formation during electrolytic etching of silicon in hydrofluoric acid solutions. Inorg Mater 51, 747–753 (2015). https://doi.org/10.1134/S0020168515080014

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S0020168515080014

Keywords

Search

Navigation