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Interaction of multiply charged manganese nanoclusters with selenium and tellurium atoms in silicon

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Abstract

We have studied interaction of multiply charged manganese nanoclusters with Se and Te impurity atoms in silicon after simultaneous and sequential codoping. The results demonstrate that, after diffusion doping, certain thermal annealing conditions lead to strong interaction of Mn with Se and Te impurities. We have determined the optimal temperature of such interaction, proposed an interaction mechanism, and demonstrated the possibility of the formation of multicomponent nanoclusters of the form Si2Mn2−Se2+ and Si2Mn2−Te2+ in the silicon lattice without considerable distortion of chemical bonds in the silicon lattice.

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Authors and Affiliations

  1. Tashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, Uzbekistan

    M. K. Bakhadyrkhanov & Kh. M. Iliev

  2. Berdakh State University, ul Akademika Abdirova 1, Nukus, 742000, Karakalpakstan, Uzbekistan

    Z. M. Saparniyazova & K. A. Ismailov

Authors
  1. M. K. Bakhadyrkhanov
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  2. Z. M. Saparniyazova
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  3. Kh. M. Iliev
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  4. K. A. Ismailov
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Correspondence to M. K. Bakhadyrkhanov.

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Original Russian Text © M.K. Bakhadyrkhanov, Z.M. Saparniyazova, Kh.M. Iliev, K.A. Ismailov, 2015, published in Neorganicheskie Materialy, 2015, Vol. 51, No. 8, pp. 838–842.

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Bakhadyrkhanov, M.K., Saparniyazova, Z.M., Iliev, K.M. et al. Interaction of multiply charged manganese nanoclusters with selenium and tellurium atoms in silicon. Inorg Mater 51, 767–771 (2015). https://doi.org/10.1134/S0020168515070031

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  • DOI: https://doi.org/10.1134/S0020168515070031

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