Abstract
Infrared absorption spectra of clusters are calculated by a semiempirical method (with PM3 parameterization), and the effect of oxidation on the position and strength of absorption bands is examined.
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References
Gremlich, H.-U., IR Spektroskopie, Ettingen: Bruker Optik, 2000.
Jarrold, M.F., Ray, U., and Creegan, K.M., Chemistry of semiconductor clusters: large silicon clusters are much less reactive towards oxygen than the bulk source, J. Chem. Phys., 1990, vol. 93, pp. 224–229.
Gusev, O.B., Poddubnyi, A.N., Prokof’ev, A.A., and Yassievich, I.N., Light emission from silicon nanocrystals, Semiconductors, 2013, vol. 47, no. 2, pp. 183–202.
He, Y.-L., Yin, C.-Z., Cheng, G.-X., Wang, L.-C., Liu, X., and Hu, J G.Y., The structure and properties of nanosize crystalline silicon films, Appl. Phys., 1994, vol. 75, no. 2, pp. 797–803.
Sokolenko, E.V., Modeling of IR absorption spectra of impurity defects in diamond nanoclusters, Inorg. Mater., 2014, vol. 50, no. 3, pp. 246–252.
Lenshin, A.S., Kashkarov, V.M., Seredin, P.V., Spivak, Yu.M., and Moshnikov, V.A., XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on n- and p-type substrates, Semiconductors, 2011, vol. 45, no. 9, pp. 1183–1188.
Ershov, A.V., Chugrov, I.A., Tetelbaum, D.I., Mashin, A.I., Pavlov, D.A., Nezhdanov, A.V., Bobrov, A.I., and Grachev, D.A., Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and SiO2, Semiconductors, 2013, vol. 47, no. 4, pp. 481–486.
Lisovskyy, I.P., Indutnyy, I.Z., Gnennyy, B.N., Lytvyn, P.M., Mazunov, D.O., Oberemok, A.S., Sopinskyy, N.V., and Shepelyavyi, P.E., Structuralphase transformations in SiOx films in the course of vacuum heat treatment, Semiconductors, 2003, vol. 37, no. 1, pp. 97–102.
Vasin, A.V., Okholin, P.N., Verovsky, I.N., Nazarov, A.N., Lysenko, V.S., Kholostov, K.I., Bondarenko, V.P., and Ishikawa, Y., Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy, Semiconductors, 2011, vol. 45, no. 3, pp. 350–354
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Original Russian Text © E.V. Sokolenko, E.P. Kuznechenkov2015, published in Neorganicheskie Materialy, 2015, Vol. 51, No. 5, pp. 467–472.
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Sokolenko, E.V., Kuznechenkov, E.P. Effect of oxidation on IR absorption spectra of silicon. Inorg Mater 51, 413–418 (2015). https://doi.org/10.1134/S0020168515040159
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DOI: https://doi.org/10.1134/S0020168515040159