Abstract
Thin oxide films exhibiting gas-sensing properties in an ammonia atmosphere have been grown on GaAs surfaces by chemically stimulated thermal oxidation. As shown by electrical measurements, the synthesized materials are n-type. We have studied the effect of thermal processes on the gas-sensing performance of the thin films grown on GaAs using PbO + Bi2O3 mixtures and obtained the temperature dependences of the carrier concentration and mobility in the films.
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Mittova, I.Ya. and Pshestanchik, V.R., Chemistry of controlled growth of functional dielectric layers on semiconductors via impurity assisted thermal oxidation, Usp. Khim., 1991, vol. 60, no. 9, pp. 1898–1919.
Mittova, I.Ya., Tomina, E.V., Lapenko, A.A., and Khorokhordina, A.O., Solid-state reactions during thermal oxidation of vanadium-modified GaAs surfaces, Inorg. Mater., 2004, vol. 40, no. 5, pp. 441–444.
Mittova, I.Ya., Pshestanchik, V.R., and Kostryukov, V.F., Nelineinye effekty v protsessakh aktivirovannogo okisleniya GaAs (Nonlinear Effects in Activated GaAs Oxidation Processes), Voronezh: Voronezh. Gos. Univ., 2008.
Kozhevnikova, T.V., Penskoi, P.K., Kostryukov, V.F., et al., Role of an inert component in compositions with manganese(II) and manganese(IV) oxides in studying nonlinear effects in GaAs thermal oxidation, Russ. J. Inorg. Chem., 2010, vol. 55, no. 12, pp. 1857–1862.
Mittova, I.Ya., Kostryukov, V.F., Pshestanchik, V.R., et al., Specific features of the joint influence of lead and bismuth oxides on thermal oxidation of GaAs, Russ. J. Inorg. Chem., 2001, vol. 46, no. 5, pp. 723–727.
Myasnikov, I.A., Sukharev, V.Ya., Kupriyanov, L.Yu., et al., Poluprovodnikovye sensory v fiziko-khimicheskikh issledovaniyakh (Semiconductor Sensors in Physicochemical Studies), Moscow: Nauka, 1991.
Rembeza, S.I., Svistova, T.V., Rembeza, E.S., and Borsyakova, O.I., The microstructure and physical properties of thin SnO2 films, Semiconductors, 2001, vol. 35, no. 7, pp. 762–765.
Physics of Thin Films: Advances in Research and Development, Hass, G., Ed., New York: Academic, 1967, vol. 1.
Bonch-Bruevich, V.L. and Kalashnikov, S.G., Fizika poluprovodnikov (Semiconductor Physics), Moscow: Nauka, 1990.
Vol’kenshtein, F.F., Elektronnye protsessy na poverkhnosti poluprovodnikov pri khemosorbtsii (Chemisorption-Induced Electronic Processes on Semiconductor Surfaces), Moscow: Nauka, 1987.
Fistul’, V.I., Fizika i khimiya tverdogo tela (Solid State Physics and Chemistry), Moscow: Metallurgiya, 1995.
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Original Russian Text © V.F. Kostryukov, I.Ya. Mittova, 2015, published in Neorganicheskie Materialy, 2015, Vol. 51, No. 5, pp. 479–483.
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Kostryukov, V.F., Mittova, I.Y. Ammonia response of thin films grown on GaAs using PbO + Bi2O3 mixtures. Inorg Mater 51, 425–429 (2015). https://doi.org/10.1134/S0020168515040056
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DOI: https://doi.org/10.1134/S0020168515040056