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Resistivity and bulk compressibility of manganese-doped ZnGeAs2 at hydrostatic pressures of up to 9 GPa

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We have measured the resistivity and relative bulk compressibility of Zn1 − x Mn x GeAs2 (x = 0.02 and 0.4) samples at hydrostatic pressures of up to 9 GPa. The pressure dependences of the resistivity and relative compressibility demonstrate sharp changes in resistivity and volume. The changes occur at the same high pressure, attesting to a structural phase transition.

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Correspondence to A. Yu. Mollaev.

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Original Russian Text © A.Yu. Mollaev, I.K. Kamilov, R.K. Arslanov, T.R. Arslanov, U.Z. Zalibekov, S.F. Marenkin, I.V. Fedorchenko, 2015, published in Neorganicheskie Materialy, 2015, Vol. 51, No. 4, pp. 351–353.

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Mollaev, A.Y., Kamilov, I.K., Arslanov, R.K. et al. Resistivity and bulk compressibility of manganese-doped ZnGeAs2 at hydrostatic pressures of up to 9 GPa. Inorg Mater 51, 299–301 (2015). https://doi.org/10.1134/S0020168515030103

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  • Chalcopyrite
  • Structural Phase Transition
  • High Hydrostatic Pressure
  • Dilute Magnetic Semiconductor
  • Diarsenide