Springer Nature is making SARS-CoV-2 and COVID-19 research free. View research | View latest news | Sign up for updates

Resistivity and bulk compressibility of manganese-doped ZnGeAs2 at hydrostatic pressures of up to 9 GPa

  • 60 Accesses

Abstract

We have measured the resistivity and relative bulk compressibility of Zn1 − x Mn x GeAs2 (x = 0.02 and 0.4) samples at hydrostatic pressures of up to 9 GPa. The pressure dependences of the resistivity and relative compressibility demonstrate sharp changes in resistivity and volume. The changes occur at the same high pressure, attesting to a structural phase transition.

This is a preview of subscription content, log in to check access.

References

  1. 1.

    Novotortsev, V.M., Marenkin, S.F., Fedorchenko, I.V., and Kochura, A.V., Physicochemical foundations of synthesis of new ferromagnets from chalcopyrites, Russ. J. Inorg. Chem., 2010, vol 55, no. 11, pp. 1762–1773.

  2. 2.

    Mollaev, A.Yu., Arslanov, R.K., Zalibekov, U.Z., Marenkin, S.F., Novotortsev, V.M., Mikhailov, S.G., and Molchanov, A.V., Phase transition of the new ferromagnet Cd1 − x MnxGeAs2 at high pressures (0.9–4.7 GPa), Inorg. Mater., 2005, vol. 41, no. 1, pp. 7–10.

  3. 3.

    Mollaev, A.Yu., Kamilov, I.K., Arslanov, R.K., Zalibekov, U.Z., Varnavskii, S.A., and Marenkin, S.F., Phase transformation of p-Cd1 − x MnxGeAs2 single crystals at 5.5 GPa, Inorg. Mater., 2009, vol. 45, no. 9, pp. 961–964.

  4. 4.

    Novotortsev, V.M., Mollaev, A.Yu., Kamilov, I.K., Arslanov, R.K., Zalibekov, U.Z., Marenkin, S.F., and Varnavskii, S.A., Phase transformations of the ferromagnetic semiconductor Cd1 − x MnxGeAs2 at pressures of up to 5 GPa, Inorg. Mater., 2006, vol. 42, no. 8, pp. 826–829.

  5. 5.

    Demin, R.F., Koroleva, L.I., Marenkin, S.F., Mikhailov, S.G., Novotortsev, V.M., Kalinnikov, V.T., Aminov, T.G., Szymczak, R., Szymczak, H., and Baran, M., A new high-T C ferromagnet: manganesedoped CdGeAs2 chalcopyrite, Tech. Phys. Lett., 2004, vol. 30, no. 11, pp. 924–926.

  6. 6.

    Mollaev, A.Yu., Kamilov, I.K., Arslanov, R.K., Zalibekov, U.Z., Arslanov, T.R., Bashirov, R.R., Novotorzev, V.M., and Marenkin, S.F., Baric and temperature dependences of kinetic coefficients in p-Cd0.7Mn0.3GeAs2 at atmospheric and high pressures, Phys. Status Solidi B, 2009, vol. 246, no. 3, pp. 655–657.

  7. 7.

    Mollaev, A.Yu., Kamilov, I.K., Arslanov, R.K., Novotortsev, V.M., Marenkin, S.F., Trukhan, V.M., Arslanov, T.R., Zalibekov, U.Z., and Fedorchenko, I.V., High-pressure volume magnetostriction in the diluted magnetic semiconductor Cd1 − x MnxGeAs2 (x = 0.06–0.3), Inorg. Mater., 2011, vol. 47, no. 11, pp. 1171–1173.

  8. 8.

    Arslanov, T.R., Mollaev, A.Yu., Kamilov, I.K., Arslanov, R.K., Kilanski, L., Trukhan, V.M., Chatterji, T., Marenkin, S.F., and Fedorchenko, I.V., Emergence of pressure-induced metamagnetic-like state in Mn-doped CdGeAs2 chalcopyrite, Appl. Phys. Lett., 2013, vol. 103, paper 192 403.

  9. 9.

    Arslanov, R.K., Mollaev, A.Yu., Kamilov, I.K., Arslanov, T.R., Zalibekov, U.Z., Novotorzev, V.M., Marenkin, S.F., and Troyanchuk, I., Pressure effect on the anomalies of the electric and magnetic properties of diluted magnetic semiconductor CdGeAs2 doped with Mn, Phys. Status Solidi, vol. 250, no. 4, pp. 736–740.

  10. 10.

    Koroleva, L.I., Pavlov, V.Yu., Zashchirinskii, D.M., Marenkin, S.F., Varnavskii, S.A., Szymczak, R., Dobrowolski, W., and Kilanskii, L., Magnetic and electrical properties of the ZnGeAs2:Mn chalcopyrite, Phys. Solid State, 2007, no. 11, pp. 2121–2125.

  11. 11.

    Fedorchenko, I.V., Kochura, A.V., Marenkin, S.F., Aronov, A.N., Koroleva, L.I., Kilanski, L., Szymczak, R., Dobrowolski, W., Ivanenko, S., and Lahderanta, E., Advanced material for spintronic based on Zn(Si,Ge)As2 chalcopyrites, IEEE Trans. Magn., 2012, vol. 48, no. 4, pp. 1581–1584.

  12. 12.

    Murashov, S.V., Yarzhemsky, V.G., Nefedov, V.I., and Murav’ev, E.N., Electronic structure of magnetic semiconductors Cd1−x MnxGeAs2 and Cu1−x MnxGaTe, Russ. J. Inorg. Chem., 2007, vol. 55, no. 8, pp. 1243–1247.

  13. 13.

    Yarzhemsky, V.G., Murashov, S.V., Nefedov, V.I., and Muraviev, E.N., Electronic structure and chemical bonds in the magnetic semiconductors MnxCd1−x GeAs2 and MnxZn1−x GeAs2, Inorg. Mater., 2008, vol. 44, no. 11, pp. 1169–1175.

  14. 14.

    Tsiok, O.B., Bredikhin, V.V., Sidorov, V.A., and Khvostantsev, L.G., Measurements of compressibility of solids and powder compacts by a strain gauge technique at hydrostatic pressure up to 9 GPa, High Pressure Res., 1992, vol. 10, pp. 523–533.

  15. 15.

    Khvostantsev, L.G., Vereshagin, L.P., and Novikov, A.P., Device of toroid type for high pressure generation, High Temp.-High Pressures, 1977, vol. 9, no. 6, pp. 637–639.

  16. 16.

    Mollaev, A.Yu., Saipulaeva, L.A., Arslanov, R.K., and Marenkin, S.F., Effect of hydrostatic pressure on the transport properties of cadmium diarsenide crystals, Inorg. Mater., 2001, vol. 37, no. 4, pp. 327–330.

Download references

Author information

Correspondence to A. Yu. Mollaev.

Additional information

Original Russian Text © A.Yu. Mollaev, I.K. Kamilov, R.K. Arslanov, T.R. Arslanov, U.Z. Zalibekov, S.F. Marenkin, I.V. Fedorchenko, 2015, published in Neorganicheskie Materialy, 2015, Vol. 51, No. 4, pp. 351–353.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Mollaev, A.Y., Kamilov, I.K., Arslanov, R.K. et al. Resistivity and bulk compressibility of manganese-doped ZnGeAs2 at hydrostatic pressures of up to 9 GPa. Inorg Mater 51, 299–301 (2015). https://doi.org/10.1134/S0020168515030103

Download citation

Keywords

  • Chalcopyrite
  • Structural Phase Transition
  • High Hydrostatic Pressure
  • Dilute Magnetic Semiconductor
  • Diarsenide