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Epitaxial growth of GaAs thin layers on NiSb substrates

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Abstract

We report the growth of gallium arsenide epilayers on the surface of single-crystal NiSb having metallic conduction. The gallium arsenide epilayers were grown by molecular beam epitaxy under conditions typical of the fabrication of homoepitaxial structures. Structural and morphological characterization of the GaAs films showed that the growth process involved a transition from a textured polycrystal to a more ordered layer with a well-defined system of diffraction spots in its electron diffraction pattern, indicative of an epitaxial process.

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Authors and Affiliations

  1. Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences, pl. Akademika Vvedenskogo 1, Fryazino, Moscow oblast, 141190, Russia

    S. A. Aitkhozhin, A. S. Artemov, P. S. Belousov, M. A. Bobylev, E. V. Kaevitser, V. E. Lyubchenko, K. P. Petrov, Yu. Sh. Temirov & S. B. Farafonov

Authors
  1. S. A. Aitkhozhin
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  2. A. S. Artemov
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  3. P. S. Belousov
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  4. M. A. Bobylev
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  5. E. V. Kaevitser
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  6. V. E. Lyubchenko
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  7. K. P. Petrov
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  8. Yu. Sh. Temirov
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  9. S. B. Farafonov
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Corresponding author

Correspondence to A. S. Artemov.

Additional information

Original Russian Text © S.A. Aitkhozhin, A.S. Artemov, P.S. Belousov, M.A. Bobylev, E.V. Kaevitser, V.E. Lyubchenko, K.P. Petrov, Yu.Sh. Temirov, S.B. Farafonov, 2015, published in Neorganicheskie Materialy, 2015, Vol. 51, No. 2, pp. 121–125.

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Aitkhozhin, S.A., Artemov, A.S., Belousov, P.S. et al. Epitaxial growth of GaAs thin layers on NiSb substrates. Inorg Mater 51, 83–87 (2015). https://doi.org/10.1134/S002016851501001X

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  • DOI: https://doi.org/10.1134/S002016851501001X

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