Abstract
We have studied the effect of tungsten atoms (tungsten coating) on the properties of gold-doped silicon. The coating considerably increased the resistivity of the silicon and markedly reduced the photoconductivity relaxation time. The silicon doped with gold in the presence of tungsten was found to have an energy level with an ionization energy E = E c − (0.23 ± 0.02) eV. In uncoated gold-doped silicon, no energy level with such ionization energy was found. This strongly suggests that the energy level with an ionization energy E = E c − (0.23 ± 0.02) eV is due to tungsten centers.
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References
Milnes, A.G., Deep Impurities in Semiconductors, New York: Wiley, 1973. Translated under the title Primesi s glubokimi urovnyami v poluprovodnikakh, Moscow: Mir, 1977, pp. 1–562.
Fujisaki, Y., Ando, T., Kozuka, Y., and Takano, Y., Characterization of tungsten-related deep levels in bulk silicon crystal, J. Appl. Phys., 1988, vol. 63, no. 7, pp. 2304–2306.
Voronkova, G.M., Zuev, V.V., Kiryukhin, A.D., et al., Spectral and recombination characteristics of silicon coated with tungsten and heat-treated at high temperatures, Inorg. Mater., 1997, vol. 6, no. 11, pp. 1087–1091.
Wu, R.H. and Peaker, A.R., Capture cross section of the gold donor and acceptor states in N-type Czochralski silicon, Solid-State Electron., 1982, vol. 25, no. 7, pp. 643–649.
Bykovskii, Yu.A., Voronkova, G.M., Grigor’ev, V.V., et al., Determination of the recombination parameters of a semiconducting material under laser excitation in a microwave field, Preprint of Moscow Engineering Physics Institute, Moscow, 1992, no. 007-92, pp. 1–30.
Ryvkin, S.M., Fotoelektricheskie yavleniya v poluprovodnikakh (Photoelectric Phenomena in Semiconductors), Moscow: Fizmatlit, 1963, pp. 41–46.
Antonova, I.V., Misyuk, A., and Popov, V.P., Formation of oxygen precipitates in silicon, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1997, vol. 31, no. 38, pp. 998–1002.
Korshunov, F.P., Bogatyrev, Yu.V., and Vavilov, V.A., Vozdeistvie radiatsii na integral’nye mikroskhemy (Radiation Effect on Integrated Circuits), Moscow: Nauka i Tekhnika, 1986, pp. 30–31.
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Original Russian Text © S.I. Rasmagin, 2014, published in Neorganicheskie Materialy, 2014, Vol. 50, No. 11, pp. 1165–1168.
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Rasmagin, S.I. Effect of tungsten coating on the properties of high-resistivity gold-doped silicon. Inorg Mater 50, 1075–1077 (2014). https://doi.org/10.1134/S0020168514110144
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DOI: https://doi.org/10.1134/S0020168514110144