Abstract
A model has been proposed for whisker growth controlled by a heterogeneous chemical reaction on the surface of the liquid phase. The model considers a “feed” zone inside the boundary layer in the vapor phase, where the gas flow in the reactor has a negligible velocity. Since the feed zone is considerably larger than the crystal, the model possesses spherical symmetry. In the immediate vicinity of the surface of the liquid phase, there is a gas layer with constant reactant concentrations. The growth rate is determined by the reactant concentrations in this layer, which are controlled by the balance between the diffusion and chemical processes involved. Expressions are obtained for the concentrations of the components at the surface of the liquid phase and for the crystal growth rate as a function of crystal radius. The etching of a crystal through the liquid phase is considered.
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Original Russian Text © O.D. Kozenkov, 2014, published in Neorganicheskie Materialy, 2014, Vol. 50, No. 11, pp. 1238–1242.
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Kozenkov, O.D. A model for whisker growth limited by a heterogeneous chemical reaction. Inorg Mater 50, 1146–1150 (2014). https://doi.org/10.1134/S0020168514110107
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DOI: https://doi.org/10.1134/S0020168514110107