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Describing the heat capacity of III–VI compound semiconductors in a fractal model

  • On the Occasion of the Eighty-Fifth Birthday of Academician V.B. Lazarev
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Inorganic Materials Aims and scope

Abstract

The fractal model of heat capacity is shown to be applicable to GaSe, Ga2Se3, GaTe, Ga2Te3, InSe, and InTe. The parameters of the model are determined: characteristic temperature and temperature-dependent multifractal (fracton) dimension.

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Authors and Affiliations

  1. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia

    A. V. Tyurin, A. D. Izotov & K. S. Gavrichev

  2. Moscow State University, Moscow, 119899, Russia

    V. P. Zlomanov

Authors
  1. A. V. Tyurin
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  2. A. D. Izotov
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  3. K. S. Gavrichev
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  4. V. P. Zlomanov
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Correspondence to A. V. Tyurin.

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Original Russian Text © A.V. Tyurin, A.D. Izotov, K.S. Gavrichev, V.P. Zlomanov, 2014, published in Neorganicheskie Materialy, 2014, Vol. 50, No. 9, pp. 979–982.

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Tyurin, A.V., Izotov, A.D., Gavrichev, K.S. et al. Describing the heat capacity of III–VI compound semiconductors in a fractal model. Inorg Mater 50, 903–906 (2014). https://doi.org/10.1134/S0020168514090155

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  • DOI: https://doi.org/10.1134/S0020168514090155

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