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Growth of magnetic eutectic GaSb-MnSb films by pulsed laser deposition

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Eutectic GaSb + MnSb films ranging in thickness from 80 to 130 nm have been grown on sapphire substrates by pulsed laser deposition using mechanical droplet separation. The films were similar in composition to the ablation target, consisting of the eutectic GaSb-MnSb alloy. According to atomic force and electron microscopy data, the films were homogeneous, with p-type conductivity. Their electrical properties depended significantly on deposition conditions. The best films had a resistivity of 7 × 10−3 Ω cm, carrier concentration of 8.1 × 1019 cm−3, and carrier mobility of 102 cm2/(V s). Characteristically, the films had a negative magnetoresistance. Their magnetization curves showed saturation in a magnetic field of ∼1 × 10−1 T. According to the magnetic-field dependences, the coercive force in the films was within 3 × 10−2 T; that is, the films were soft magnets with a small domain size.

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Correspondence to S. F. Marenkin.

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Original Russian Text © S.F. Marenkin, O.A. Novodvorsky, A.V. Shorokhova, A.B. Davydov, B.A. Aronzon, A.V. Kochura, I.V. Fedorchenko, O.D. Khramova, A.V. Timofeev, 2014, published in Neorganicheskie Materialy, 2014, Vol. 50, No. 9, pp. 973–978.

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Marenkin, S.F., Novodvorsky, O.A., Shorokhova, A.V. et al. Growth of magnetic eutectic GaSb-MnSb films by pulsed laser deposition. Inorg Mater 50, 897–902 (2014). https://doi.org/10.1134/S0020168514090076

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  • Pulse Laser Deposition
  • GaSb
  • Coercive Force
  • Magnetic Field Dependence
  • Dilute Magnetic Semiconductor