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Growth of magnetic eutectic GaSb-MnSb films by pulsed laser deposition

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Abstract

Eutectic GaSb + MnSb films ranging in thickness from 80 to 130 nm have been grown on sapphire substrates by pulsed laser deposition using mechanical droplet separation. The films were similar in composition to the ablation target, consisting of the eutectic GaSb-MnSb alloy. According to atomic force and electron microscopy data, the films were homogeneous, with p-type conductivity. Their electrical properties depended significantly on deposition conditions. The best films had a resistivity of 7 × 10−3 Ω cm, carrier concentration of 8.1 × 1019 cm−3, and carrier mobility of 102 cm2/(V s). Characteristically, the films had a negative magnetoresistance. Their magnetization curves showed saturation in a magnetic field of ∼1 × 10−1 T. According to the magnetic-field dependences, the coercive force in the films was within 3 × 10−2 T; that is, the films were soft magnets with a small domain size.

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References

  1. 1.

    Berkowitz, A.E., Mitchell, J.R., Carey, M.J., Young, A.P., Zhang, S., Spada, F.E., Parker, F.T., and Hutten, A., Giant magnetoresistance in heterogeneous Cu-Co alloys, Phys. Rev. Lett., 1992, vol. 68, no. 25, pp. 3745–3748.

  2. 2.

    Dietl, T., A ten-year perspective on dilute magnetic semiconductors and oxides, Nat. Mater., 2010, vol. 9, pp. 965–974.

  3. 3.

    Marenkin, S.F., Izotov, A.D., and Novotortsev, V.M., Physicochemical principles behind the synthesis of magnetic granular structures in semiconductor-ferromagnetic systems, Fiz. Tverd. Tela, 2013, vol. 1, pp. 56–58.

  4. 4.

    Ognev, A.V. and Samardak, A.S., Spintronics: physical principles, devices, and prospects, Vestn. Dalnevost. Otd. Ross. Akad. Nauk, 2006, no. 4, pp. 70–80.

  5. 5.

    Chen, L., Yang, X., Yang, F., Zhao, J., Misuraca, J., Xiong, P., and von Molnar, S., Enhancing the Curie temperature of ferromagnetic semiconductor (Ga,Mn)As to 200 K via nanostructure engineering, Nanoletters, 2011, vol. 11, pp. 2584–2589.

  6. 6.

    Matsukura, F., Abe, E., and Ohno, H., Magnetotransport properties of (Ga,Mn)Sb, J. Appl. Phys., 2000, vol. 87, pp. 6442–6444.

  7. 7.

    Abe, E., Matsukura, F., Yasuda, H., Ohno, Y., and Ohno, H., Molecular beam epitaxy of III–V diluted magnetic semiconductor (Ga,Mn)Sb, Phys. E (Amsterdam, Neth.), 2000, vol. 7, pp. 981–985.

  8. 8.

    Akinaga, H., Mizuguchi, M., Manago, T., Sato, T., Kuramochi, H., Ono, K., Ofuchi, H., and Oshima, M., Magnetoresistive switch effect in MnSb granular films grown on sulfur-passivated GaAs: more-than 10 000% magnetoresistance effect at room-temperature, Phys. E (Amsterdam, Neth.), 2001, vol. 10, pp. 447–451.

  9. 9.

    Marenkin, S.F., Trukhan, V.M., Trukhanov, S.V., Fedorchenko, I.V., and Novotortsev, V.M., Phase equilibria and electrical and magnetic properties of a eutectic in the GaSb-MnSb system, Russ. J. Inorg. Chem., 2013, vol. 58, no. 11, pp. 1324–1329.

  10. 10.

    Novotortsev, V.M., Zakharov, I.S., Kochura, A.V., Marenkin, S.F., Laikho, R., Lakhderanta, E., Lashkul, A., Veresov, A.G., Molchanov, A.V., and Yur’ev, G.S., Ferromagnetism of manganese-doped InSb alloys, Russ. J. Inorg. Chem., 2006, vol. 51, no. 10, pp. 1627–1631.

  11. 11.

    Kochura, A.V., Aronzon, B.A., Lisunov, K.G., Lashkul, A.V., Sidorenko, A.A., De Renzi, R., Marenkin, S.F., Alam, M., Kuzmenko, A.P., and Lähderanta, E., Structural and magnetic properties of In1 − x MnxSb: effect of Mn complexes and MnSb nanoprecipitates, J. Appl. Phys., 2013, vol. 113, paper 083 905.

  12. 12.

    Aronzon, B.A., Pankov, M.A., Rylkov, V.V., Meilikhov, E.Z., Lagutin, A.S., Pashaev, E.M., Chuev, M.A., Kvardakov, V.V., Likhache, I.A., Vihrova, O.V., Lashkul, A.V., Lähderanta, E., Vedeneev, A.S., and Kervalishvili, P., Ferromagnetism of low-dimensional Mn-doped III–V semiconductor structures in the vicinity of the insulator-metal transition, J. Appl. Phys., 2010, vol. 107, paper 023 905.

  13. 13.

    Nie, S.H., Chin, Y.Y., Liu, W.Q., Tung, J.C., Lu, J., Lin, H.J., Guo, G.Y., Meng, K.K., Chen, L., Zhu, L.J., Pan, D., Chen, C.T., Xu, Y.B., Yan, W.S., and Zhao, J.H., Ferromagnetic interfacial interaction and the proximity effect in a Co2FeAl/(Ga,Mn)As bilayer, Phys. Rev. Lett., 2013, vol. 111, paper 027 203.

  14. 14.

    Panchenko, V.Ya., Novodvorsky, O.A., and Golubev, V.S., Technology of pulsed laser deposition of nanofilms, Nauka Tekhnol. Prom-sti., 2006, no. 4, pp. 39–51.

  15. 15.

    Pulsed Laser Deposition of Thin Films: Applications-LED growth of functional materials, Eason, R., Ed., Hoboken: Wiley-Interscience, 2007.

  16. 16.

    Novodvorsky, O.A., Lotin, A.A., and Khaidukov, E.V., RF Patent 89 906, 2009.

  17. 17.

    Novodvorsky, O.A., Gorbatenko, L.S., Panchenko, V.Ya., Khramova, O.D., Cherebylo, E.A., Wenzel, C., Bartha, J.W., Bublik, V.T., and Shcherbachev, K.D., Optical and structural characteristics of Ga-doped ZnO films, Semiconductors, 2009, vol. 43, no. 4, pp. 419–424.

  18. 18.

    Novodvorsky, O.A., Lotin, A.A., Panchenko, V.Ya., Parshina, L.S., Khaidukov, E.V., Zuev, D.A., and Khramova, O.D., Electroluminescence of ZnO-based semiconductor heterostructures, Kvantovaya Elektron., 2011, vol. 41, no. 1, pp. 4–7.

  19. 19.

    Petukhov, I.A., Shatokhin, A.N., Putilin, F.N., Rumyantseva, M.N., Kozlovskii, V.F., Gaskov, A.M., Zuev, D.A., Lotin, A.A., Novodvorsky, O.A., and Khramova, M., Pulsed laser deposition of conductive indium tin oxide thin films, Inorg. Mater., 2012, vol. 48, no. 10, pp. 1020–1025.

  20. 20.

    Petukhov, I.A., Parshina, L.S., Zuev, D.A., Lotin, A.A., Novodvorsky, O.A., Khramova, O.D., Shatokhin, A.N., Putilin, F.N., Rumyantseva, M.N., Kozlovskii, V.F., Maslakov, K.I., Ivanov, V.K., and Gaskov, A.M., Transport properties of thin SnO2〈Sb〉 films grown by pulsed laser deposition, Inorg. Mater., 2013, vol. 49, no. 11, pp. 1123–1126.

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Correspondence to S. F. Marenkin.

Additional information

Original Russian Text © S.F. Marenkin, O.A. Novodvorsky, A.V. Shorokhova, A.B. Davydov, B.A. Aronzon, A.V. Kochura, I.V. Fedorchenko, O.D. Khramova, A.V. Timofeev, 2014, published in Neorganicheskie Materialy, 2014, Vol. 50, No. 9, pp. 973–978.

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Marenkin, S.F., Novodvorsky, O.A., Shorokhova, A.V. et al. Growth of magnetic eutectic GaSb-MnSb films by pulsed laser deposition. Inorg Mater 50, 897–902 (2014). https://doi.org/10.1134/S0020168514090076

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Keywords

  • Pulse Laser Deposition
  • GaSb
  • Coercive Force
  • Magnetic Field Dependence
  • Dilute Magnetic Semiconductor