Abstract
This paper describes a process for the preparation of extrapure gallium(III) sulfide by reacting gallium(III) iodide with sulfur in an evacuated two-zone quartz glass reactor. The maximum synthesis temperature was 350°C. The residual iodine was removed by calcining the powders at temperatures from 500 to 650°C. The gallium(III) sulfide yield was 93–96% of theoretical yield. The samples were characterized by X-ray microanalysis, X-ray diffraction, and laser mass spectrometry and were shown to contain the following impurities (ppm): silicon, 20–28; iron and calcium, 0.5–0.6; potassium, 0.3–0.7; chromium, 0.2; chlorine, 70–100; aluminum, 0.05–0.1; and phosphorus, 0.1–2. The iodine content varied from 0.04 to 1.8 at %, depending on calcination temperature and time.
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Rud’, V.Yu., Rud’, Yu.V., Vaipolin, A.A., Bodnar’, I.V., and Fernelius, N., Photosensitive structures on CdGa2S4 single crystals, Semiconductors, 2003, vol. 37, no. 11, pp. 1283–1290.
Bodnar, I.V., Rud, V.Yu., Rud, Yu.V., and Serginov, M.S., Photoelectric properties of p-GaSe/n-CdGa2S4 heterostructures, J. Appl. Spectrosc., 2003, vol. 70, no. 4, pp. 573–576.
Samson, B.N., Medeiros-Neto, J.A., Laming, R.I., and Hewak, D.W., Dysprosium doped Ga: La: S glass for an efficient optical fibre amplifier operating at 1.3 μm, Electron. Lett., 1994, vol. 30, no. 19, pp. 1617–1619.
Handbuch der präparativen anorganischen Chemie in drei Bänden, von Brauer, G., Ed., Stuttgart: Ferdinand Enke, 1978, 3rd ed., vol. 3.
Samsonov, G.V. and Drozdov, S.V., Sul’fidy (Sulfides), Moscow: Metallurgiya, 1972.
Churbanov, M.F., Sibirkin, A.A., Vel’muzhov, A.P., Shiryaev, V.S., Dianov, E.M., and Plotnichenko, V.G., RF Patent 2 467 962, 2012.
Devyatykh, G.G. and Churbanov, M.F., Vysokochistye khal’kogeny (High-Purity Chalcogens), Nizhni Novgorod: Nizhegorodsk. Gos. Univ., 1997.
Bodnar’, I.V., Rud’, Yu.V., and Rud’, V.Yu., Growth and properties of CdGa2S4 single crystals, Inorg. Mater., 2004, vol. 40, no. 2, pp. 102–106.
PCPDFWIN—A Windows Retrieval/Display Program for Accessing the ICDD PDF-2 Database, JCPDS-International Center for Diffraction Data, 1998.
Vel’muzhov, A.P., Sibirkin, A.A., and Churbanov, M.F., Tensimetric analysis and thermodynamic modeling of heterogeneous equilibria in the GeI4-S system, Vestn. Nizhegorodsk. Gos. Univ., 2011, no. 6(1), pp. 132–137.
Ksenzenko, V.I. and Stasinevich, D.S., Khimiya i tekhnologiya broma, ioda i ikh soedinenii (Chemistry and Technology of Bromine, Iodine, and Their Compounds), Moscow: Khimiya, 1995.
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Original Russian Text © A.P. Vel’muzhov, M.V. Sukhanov, A.M. Potapov, A.I. Suchkov, M.F. Churbanov, 2014, published in Neorganicheskie Materialy, 2014, Vol. 50, No. 7, pp. 708–712.
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Vel’muzhov, A.P., Sukhanov, M.V., Potapov, A.M. et al. Preparation of extrapure Ga2S3 by reacting GaI3 with sulfur. Inorg Mater 50, 656–660 (2014). https://doi.org/10.1134/S0020168514070152
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DOI: https://doi.org/10.1134/S0020168514070152