Abstract
The Hall coefficient of magnetogranulated p-Cd1 − x Mn x GeAs2 (x = 0.18 and 0.3) semiconductor-ferromagnetic structures has been measured at high hydrostatic pressures of up to p = 7 GPa. Semiconductor-metal transitions have been identified and investigated using resistivity and Hall coefficient versus pressure data. Normal and anomalous contributions to the Hall coefficient have been evaluated from magnetic-field dependences of the Hall resistance in magnetic fields H ≤ 0.5 T at temperatures in the range T = 77–400 K. The pressure of the ferromagnetic-paramagnetic phase transition in the materials has been determined from anomalous Hall resistance hysteresis loops.
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Original Russian Text © A.Yu. Mollaev, I.K. Kamilov, R.K. Arslanov, T.R. Arslanov, U.Z. Zalibekov, S.F. Marenkin, I.V. Fedorchenko, V.M. Trukhan, 2014, published in Neorganicheskie Materialy, 2014, Vol. 50, No. 7, pp. 699–702.
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Mollaev, A.Y., Kamilov, I.K., Arslanov, R.K. et al. Hall effect in a magnetogranulated structure of a semiconductor-ferromagnetic system at high pressures. Inorg Mater 50, 647–650 (2014). https://doi.org/10.1134/S0020168514060120
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DOI: https://doi.org/10.1134/S0020168514060120