Abstract
Based on modeling and calculation results and using appropriate photomasks, we produced microtextured Si substrates, which were then coated with a Ni layer. Next, polycrystalline CdTe films were produced on the Ni by quasi-closed space growth. Their surface morphology was examined by optical microscopy and scanning electron microscopy. We calculated the stress induced in such CdTe/Ni/Si structures by the lattice mismatch and thermal expansion mismatch between the materials in contact.
Similar content being viewed by others
References
Compaan, A.D., Denq, X., and Bohn, R.G., High efficiency thin film CdTe and α-Si based solar cells. Annual technical report, Americus, 1998, pp. 501–509.
De Moor, H., Jäger-Waldau, A., et al., European Road-map for PV. http://paris.fe.uni-lj.si/
Kazmerski, L.L., Efficiencies determined by certified agencies/laboratories, National Renewable Energy Laboratory (NREL), Golden, 2012.
Kosyachenko, L.A., Problems of efficiency of photoelectric conversion in thin-film CdS/CdTe solar cells, Semiconductors, 2006, vol. 40, no. 6, pp. 710–727.
Khrypunov, G.S., Structural mechanisms of optimization of the photoelectric properties of CdS/CdTe thinfilm heterostructures, Semiconductors, 2005, vol. 39, no. 10, pp. 1224–1228.
Il’chuk, G.A., Kurilo, I.V., Petrus’, R.Yu., et al., Morphology, structure, and composition of polycrystalline CdTe films grown on three-dimensional silicon substrates, Inorg. Mater., 2013, vol. 49, no. 4, pp. 329–334.
Il’chuk, G.A., Kurilo, I.V., Kus’nezh, V.V., et al., Modeling and fabrication of three-dimensional silicon substrates with tailored shape and microtopography parameters for CdTe films, Inorg. Mater., 2013, vol. 49, no. 3, pp. 239–246.
Poltavtsev, Yu.G. and Knyazev, A.S., Tekhnologiya obrabotki poverkhnostei v mikroelektronike (Surface Processing Technologies in Microelectronics), Kiev: Tekhnika, 1990.
Avdeev, E.V., Koltishchenkov, V.M., and Panteleeva, T.S., Two-dimensional topological modeling of etching, Elektron. Prom-st., 1986, no. 4, pp. 14–17.
Orlov, L.K., Ivina, N.L., Drozdov, Yu.N., and Alyabina, N.A., Elastic stress relaxation in buffer layers based on porous strained InGaAs/GaAs superlattices, Tech. Phys. Lett., 2002, vol. 28, no. 12, pp. 1018–1020.
Jesser, W.A. and Kuhlmann-Wilsdorf, D., On the theory of interfacial energy and elastic strain of epitaxial overgrowths in parallel alignment on single crystal substrates, Phys. Status Solidi, 1967, vol. 19, no. 1, pp. 95–105.
Novikov, B.V., Zegrya, G.G., Peleshchak, R.M., et al., Baric properties of InAs quantum dots, Semiconductors, 2008, vol. 42, no. 9, pp. 1076–1084.
Kurilo, I.V. and Alekhin, V.P., Struktura i fizikomekhanicheskie svoistva kristallov i plenok soedinenii AIIBVI (Structure and Physicomechanical Properties of II–V Crystals and Films), Moscow: MGIU, 2011.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © G.A. Il’chuk, I.V. Kurilo, R.Yu. Petrus’, V.V. Kus’nezh, 2014, published in Neorganicheskie Materialy, 2014, Vol. 50, No. 6, pp. 605–612.
Rights and permissions
About this article
Cite this article
Il’chuk, G.A., Kurilo, I.V., Petrus’, R.Y. et al. Growth of CdTe films on Ni-coated microtextured silicon substrates. Inorg Mater 50, 559–565 (2014). https://doi.org/10.1134/S0020168514060077
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S0020168514060077