Abstract
The surface topology and structure of unoxidized and oxidized end faces of a GaSe crystal have been studied by atomic force microscopy and X-ray diffraction. The largest deviation of the unoxidized end face of the GaSe crystal was within ≃2 nm, indicating high surface quality. The thermal oxidation of the GaSe crystal in air at a temperature of 600°C for 4 h was shown to influence the topology of its end face. Its structure resembled a set of small-angle cones with a density of ≃4 × 109 cm−2. Oxidation led to the formation of two chemical phases in the near-surface region: Ga2Se3 and Ga2O3.
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Original Russian Text © V.N. Katerynchuk, Z.R. Kudrynskyi, Z.D. Kovalyuk, 2014, published in Neorganicheskie Materialy, 2014, Vol. 50, No. 4, pp. 367–371.
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Katerynchuk, V.N., Kudrynskyi, Z.R. & Kovalyuk, Z.D. Structure of oxidized and unoxidized end faces of GaSe layered crystals. Inorg Mater 50, 339–343 (2014). https://doi.org/10.1134/S0020168514040062
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DOI: https://doi.org/10.1134/S0020168514040062