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Current-voltage behavior of silicon containing nanoclusters of manganese atoms

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Abstract

Using current-voltage measurements at varied temperature, incident light intensity, and illumination wavelength, we have determined the energy level spectrum of a multiply charged cluster of manganese atoms in silicon. The results demonstrate that such clusters produce a whole spectrum of energy levels in the interval ΔE = 0.2–0.46 eV from the valence band top. The energy levels in this interval are distributed exponentially.

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References

  1. Kovalyuk, Z.D., Sidor, O.N., and Netyaga, V.V., Mechanisms of current transfer and photosensitivity in Zn/CuInSe2 Schottky diodes, Tech. Phys. Lett., 2006, vol. 32, no. 5, p. 459.

    Article  CAS  Google Scholar 

  2. Kreskovsky, J.P. and Grubin, H.L., Numerical studies of annealed non-stoichiometric low temperature grown GaAs, J. Appl. Phys., 1997, vol. 81, no. 11, p. 7326.

    Article  CAS  Google Scholar 

  3. Blom, P.W.M. and Vissenberg, M.C.J.M., Charge transport in poly(p-phenylene vinylene) light-emitting diodes, Mater. Sci. Eng., 2000, vol. 27, p. 53.

    Article  Google Scholar 

  4. Edmonds, L.D., Electric currents through ion tracks in silicon devices, IEEE Trans. Nucl. Sci., 1998, vol. 45, no. 6, p. 3153.

    Article  CAS  Google Scholar 

  5. Sarkas, H.W., Kidder, L.H., and Bowen, K.H., Photoelectron spectroscopy of color centers in negatively charged cesium iodide nanocrystals, J. Chem. Phys., 1995, vol. 102, no. 1, p. 57.

    Article  CAS  Google Scholar 

  6. Berashevich, Yu.A., Danilyuk, A.L., Kholod, A.N., et al., Charge-carrier transport in nanometer-sized periodic Si/CaF2 structures with participation of traps, Semiconductors, 2001, vol. 35, no. 1, p. 110.

    Article  Google Scholar 

  7. Sherchenkov, A.A., Budagyan, B.G., and Mazurov, A.V., The mechanisms of current transport and properties of a-SiC:H/c-Si heterostructures, Semiconductors, 2005, vol. 39, no. 8, p. 928.

    Article  CAS  Google Scholar 

  8. Bakhadyrkhanov, M.K. and Isamov, S.B., Spectra of the energy levels of multicharged nanoclusters of manganese atoms in silicon, Surf. Eng. Appl. Electrochem., 2011, vol. 47, no. 6, p. 484.

    Article  Google Scholar 

  9. Bakhadyrkhanov, M.K., Ayupov, K.S., Mavlyanov, G.Kh., et al., Photoconductivity of silicon with nanoclusters of manganese atoms, Russ. Microelectron., 2010, vol. 39, no. 6, p. 401.

    Article  CAS  Google Scholar 

  10. Bakhadirkhanov, M.K., Mavlyanov, G.Kh., Ayupov, K.S., and Isamov, S.B., Negative magnetoresistance in manganese with manganese-atom complexes [Mn]4, Semiconductors, 2010, vol. 44, no. 9, p. 1145.

    Article  CAS  Google Scholar 

  11. Bakhadyrkhanov, M.K., Ayupov, K.S., Iliev, Kh.M., et al., Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon, Tech. Phys. Lett., 2010, vol. 36, no. 8, p. 741.

    Article  CAS  Google Scholar 

  12. Bakhadyrkhanov, M.K., Mavlonov, G.X., Isamov, S.B., et al., Transport properties of silicon doped with manganese via low-temperature diffusion, Inorg. Mater., 2011, vol. 47, no. 5, p. 479.

    Article  CAS  Google Scholar 

  13. Abdurakhmanov, B.A., Ayupov, K.S., Bakhadyrkhanov, M.K., et al., Low-temperature impurity diffusion in silicon, Dokl. Akad. Nauk Resp. Uz., 2010, no. 4, p. 32.

    Google Scholar 

  14. Abdurakhmanov, K.P., Vitman, R.F., Kulikov, G.S., et al., Manganese diffusion profiles in silicon at varied oxygen content, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1994, vol. 28, no. 1, p. 86.

    CAS  Google Scholar 

  15. Lampert, M. and Mark, P., Current Injection in Solids, New York: Academic, 1970, 2nd ed.

    Google Scholar 

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Correspondence to S. B. Isamov.

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Original Russian Text © M.K. Bakhadyrkhanov, S.B. Isamov, N.F. Zikrillaev, 2014, published in Neorganicheskie Materialy, 2014, Vol. 50, No. 4, pp. 353–357.

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Bakhadyrkhanov, M.K., Isamov, S.B. & Zikrillaev, N.F. Current-voltage behavior of silicon containing nanoclusters of manganese atoms. Inorg Mater 50, 325–329 (2014). https://doi.org/10.1134/S0020168514040025

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  • DOI: https://doi.org/10.1134/S0020168514040025

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