Abstract
TlGa1 − x Er x S2 (x = 0, 0.001, 0.005, 0.01) solid solutions, based on the layered compound TlGaS2, have been prepared by direct elemental synthesis. The effect of Er concentration on the dielectric and optical properties of the TlGa1 − x Er x S2 solid solutions has been studied. The results demonstrate that increasing the Er content of the TlGa1 − x Er x S2 solid solutions decreases the real part of their complex dielectric permittivity and increases their dielectric loss tangent. The conductivity (σ) of the TlGa1 − x Er x S2 solid solutions in the frequency range f = 1 to 35 MHz exhibits σ ∼ f 0.8 behavior, indicative of hopping charge transport through their band gap. We have evaluated the key parameters of this charge transport mechanism. We have studied temperature-dependent optical properties of the TlGa1 − x Er x S2 solid solutions. At temperatures in the range T = 77–200 K, the TlGa0.999Er0.001S2 solid solution has an absorption band near its fundamental absorption edge, which is due to transitions to a direct exciton state.
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Mustafaeva, S.N., Aliev, V.A., and Asadov, M.M., DC hopping conduction in TlGaS2 and TlInS2 single crystals, Fiz. Tverd. Tela (S.-Peterburg), 1998, vol. 40, no. 4, p. 612.
Mustafaeva, S.N., Frequency dispersion of dielectric coefficients in layered TlGaS2 single crystals, Phys. Solid State, 2004, vol. 46, no. 6, p. 1008.
Sheleg, A.U., Iodkovskaya, K.V., and Kurilovich, N.F., Effect of gamma radiation on the permittivity and electrical conductivity of TlGaS2 crystals, Phys. Solid State, 2003, vol. 45, no. 1, p. 69.
Sheleg, A.U., Gurtovoi, V.G., Shevtsova, V.V., et al., Effect of ionizing radiation on the dielectric characteristics of TlInS2 and TlGaS2 single crystals, Phys. Solid State, 2012, vol. 54, no. 9, p. 1870.
Mustafaeva, S.N., Photoelectric and X-ray dosimetric properties of TlGaS2〈Yb〉 single crystals, Phys. Solid State, 2005, vol. 47, no. 11, p. 2015.
Kerimova, E.M., Mustafaeva, S.N., Asadov, Yu.G., and Kerimov, R.N., Synthesis, growth and properties of TlGa1 − x YbxS2 crystals, Crystallogr. Rep., 2005, vol. 50,suppl. 1, p. S122.
Mustafaeva, S.N., Kerimova, E.M., Ismailova, P.G., and Asadov, M.M., Roentgendosimetric characteristics of detectors on the base of TlGaS2〈Yb〉 single crystals, Fizika, 2004, no. 4, p. 108.
Mustafaeva, S.N., Asadov, M.M., Kyazimov, S.B., and Gasanov, N.Z., T-x phase diagram of the TlGaS2-TlFeS2 system and band gap of TlGa1 − x FexS2 (0 ≤ x ≤ 0.01) single crystals, Inorg. Mater., 2012, vol. 48, no. 10, p. 984.
Mustafaeva, S.N., Asadov, M.M., Gasanov, N.Z., and Kyazimov, S.B., Novel functional materials based on Fedoped TlGaS2, Trudy IV mezhdunarodnoi konferentsii “Funktsional’nye nanomaterialy i vysokochistye vesh-chestva” (Proc. IV Int. Conf. Functional Nanomaterials and High-Purity Substances), Suzdal, 2012, p. 47.
Delgado, G.E., Mora, A.J., Perez, F.V., and Gonzalez, J., Crystal structure of the ternary semiconductor compound thallium gallium sulfide, TlGaS2, Phys. B (Amsterdam, Neth.), 2007, vol. 391, p. 385.
Mott, N.F. and Davis, E.A., Electronic Processes in Non-Crystalline Materials, Oxford: Clarendon, 1971.
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Original Russian Text © S.N. Mustafaeva, M.M. Asadov, E.M. Kerimova, N.Z. Gasanov, 2013, published in Neorganicheskie Materialy, 2013, Vol. 49, No. 12, pp. 1271–1276.
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Mustafaeva, S.N., Asadov, M.M., Kerimova, E.M. et al. Dielectric and optical properties of TlGa1 − x Er x S2 (x = 0, 0.001, 0.005, 0.01) single crystals. Inorg Mater 49, 1175–1179 (2013). https://doi.org/10.1134/S0020168513120121
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DOI: https://doi.org/10.1134/S0020168513120121