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Crucibles for Czochralski growth of isotopically enriched silicon single crystals

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Abstract

We have assessed isotope dilution during Czochralski growth of single crystals of stable silicon isotopes from crucibles of quartz glass of natural isotopic composition. A procedure has been developed for applying protective coatings from isotopically enriched silicon dioxide to crucibles. Comparison of the isotopic compositions of isotopically enriched polycrystalline silicon and 28Si, 29Si, and 30Si single crystals grown from it demonstrates that the use of protective coatings makes it possible to preclude isotope dilution in the crystal growth step.

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Authors and Affiliations

  1. Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, ul. Tropinina 49, Nizhni Novgorod, 603950, Russia

    A. V. Gusev, V. A. Gavva & E. A. Kozyrev

  2. Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, D-12489, Berlin, Germany

    H. Riemann & N. V. Abrosimov

Authors
  1. A. V. Gusev
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  2. V. A. Gavva
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  3. E. A. Kozyrev
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  4. H. Riemann
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  5. N. V. Abrosimov
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Correspondence to A. V. Gusev.

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Original Russian Text © A.V. Gusev, V.A. Gavva, E.A. Kozyrev, H. Riemann, N.V. Abrosimov, 2013, published in Neorganicheskie Materialy, 2013, Vol. 49, No. 12, pp. 1262–1265.

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Gusev, A.V., Gavva, V.A., Kozyrev, E.A. et al. Crucibles for Czochralski growth of isotopically enriched silicon single crystals. Inorg Mater 49, 1167–1169 (2013). https://doi.org/10.1134/S0020168513120078

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  • DOI: https://doi.org/10.1134/S0020168513120078

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