Abstract
We have studied the chemical interaction of the surface of undoped and doped ZnSe crystals with H2O2-HBr-H2O bromine-releasing solutions. The dissolution rate of the semiconductor materials has been measured as a function of etchant composition, stirring rate, temperature, and doping. The composition region of polishing solutions has been mapped out, and the surface condition after chemical etching has been examined by microstructural analysis. We have proposed and optimized polishing etchant compositions and conditions for chemical polishing of the semiconductors.
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Tenne, R., Flaisher, H., and Triboulet, R., Photoelectrochemical etching of ZnSe and nonuniform charge flow in Schottky barriers, Phys. Rev. B.: Condens. Matter Mater. Phys., 1984, vol. 29, no. 10, pp. 5799–5804.
Hughes, W.C., Boney, C., Johnson, M.A.L., et al., Surface preparation of ZnSe substrates for MBE growth of II–VI light emitters, J. Cryst. Growth, 1997, vols. 175–176, pp. 546–551.
Tenne, R., Haak, R., and Triboulet, R., Electrochemical photocapacitance of zinc selenide: Effect of photoelectrochemical etching, Ber. Bunsen-Ges. Phys. Chem., 1987, vol. 91, no. 6, pp. 597–599.
Tenne, R., Mirovsky, Y., Greenstein, Y., et al., Chalcogenide-based photo-electrochemical cells. The n-CdZn2Se4/aqueous polysulfide system, J. Electrochem. Soc., 1982, vol. 129, no. 7, pp. 1506–1512.
Sagar, A., Lehmann, W., and Faust, I.W., Etchants for ZnSe, J. Appl. Phys., 1968, vol. 39, no. 11, pp. 5336–5338.
Gautron, J., Raisin, C., and Lemasson, P., Optical and electro-optical behavior of polished and etched zinc selenide single crystals, J. Phys. D: Appl. Phys., 1982, vol. 15, pp. 153–161.
Sankar, N., Ramachandrana, K., and Sanjeeviraja, C., Growth and characterization of ZnSe and phosphorusdoped ZnSe single crystals, J. Cryst. Growth, 2002, vol. 235, nos. 1–4, pp. 195–200.
Luft, B.D., Perevoshchikov, V.A., Vozmilova, L.N., et al., Fiziko-khimicheskie metody obrabotki poverkhnosti poluprovodnikov (Physicochemical Processing of Semiconductor Surfaces), Moscow: Radio i Svyaz’, 1982.
Perevoshchikov, V.A., Dynamic Chemical Polishing of Semiconductor Surfaces, Vysokochist. Veshchestva, 1995, no. 2, pp. 5–29.
Tomashik, Z.F., Stratiichuk, I.B., Kravtsova, A.S., et al., Ukr. Patent 71 056, Byull., 2012, no. 12.
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Original Russian Text © V.N. Tomashik, A.S. Kravtsova, Z.F. Tomashik, I.B. Stratiichuk, S.N. Galkin, 2013, published in Neorganicheskie Materialy, 2013, Vol. 49, No. 10, pp. 1045–1049.
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Tomashik, V.N., Kravtsova, A.S., Tomashik, Z.F. et al. Dynamic chemical polishing of undoped and doped ZnSe crystals with H2O2-HBr-H2O solutions. Inorg Mater 49, 971–974 (2013). https://doi.org/10.1134/S0020168513100129
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DOI: https://doi.org/10.1134/S0020168513100129