Abstract
InGaAsP/InP nanoheterostructures have been grown by liquid phase epitaxy and their structural perfection has been studied. The nanoheterostructures have been used to fabricate buried mesa laser diodes on a p-InP substrate that emit in the spectral range 1310–1550 nm. The design of the buried mesa stripe diode with the use of a semi-insulating II–VI compound has made it possible to create laser diodes operating at a wavelength of 1310 nm with a telecommunication signal transfer rate of 5.5 GHz. The results are technologically attractive and reproducible. We analyze potentialities for further increasing the optical signal transfer rate.
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Original Russian Text © M.G. Vasil’ev, A.M. Vasil’ev, A.D. Izotov, Ya.G. Filatov, A.A. Shelyakin, 2013, published in Neorganicheskie Materialy, 2013, Vol. 49, No. 6, pp. 573–579.
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Vasil’ev, M.G., Vasil’ev, A.M., Izotov, A.D. et al. Fabrication and parameters of a 1310-nm buried heterostructure operating in the microwave region. Inorg Mater 49, 539–544 (2013). https://doi.org/10.1134/S0020168513060162
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DOI: https://doi.org/10.1134/S0020168513060162