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Preparation and dielectric properties of celsian ceramics based on hexagonal BaAl2Si2O8

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Celsian ceramics based on hexagonal BaAl2Si2O8 have been prepared through synthesis at 1450°C followed by firing at 1500°C. The unit-cell parameters of BaAl2Si2O8 and principal bond distances in its structure have been determined by the Rietveld method. Using differential thermal analysis and temperature-dependent dielectric measurements, we have determined the temperature of the α (hexagonal) to β (hexagonal) phase transition in our samples: 280–320°C.

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Authors and Affiliations

  1. Scientific-Practical Materials Research Centre, Belarussian Academy of Sciences, ul. Brovki 17a, Minsk, 220072, Belarus

    G. K. Savchuk, T. P. Petrochenko & A. A. Klimza

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  1. G. K. Savchuk
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  2. T. P. Petrochenko
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  3. A. A. Klimza
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Correspondence to G. K. Savchuk.

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Original Russian Text © G.K. Savchuk, T.P. Petrochenko, A.A. Klimza, 2013, published in Neorganicheskie Materialy, 2013, Vol. 49, No. 6, pp. 674–679.

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Savchuk, G.K., Petrochenko, T.P. & Klimza, A.A. Preparation and dielectric properties of celsian ceramics based on hexagonal BaAl2Si2O8 . Inorg Mater 49, 632–637 (2013). https://doi.org/10.1134/S0020168513060101

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  • DOI: https://doi.org/10.1134/S0020168513060101

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