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Activation of p-type conduction in ZnO:N films by annealing in atomic oxygen

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Abstract

ZnO:N epitaxial films have been grown by reactive magnetron sputtering. The effect of annealing in atomic oxygen on the structural and electrical properties of the ZnO:N films has been studied by X-ray diffraction, atomic force microscopy, Hall effect measurements, and X-ray photoelectron spectroscopy. By annealing at temperatures from 500 to 700°C, we have obtained p-type ZnO:N films with a resistivity of ∼57 Ω cm, hole mobility of ∼2.7 cm2/(V s), and hole concentration of ∼6.8 × 1017 cm−3. X-ray photoelectron spectroscopy results suggest that the p-type conductivity of the films is due to a decrease in the concentration of (N2)O and V O donors.

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Authors and Affiliations

  1. Berdyansk State Pedagogical University, ul. Shmidta 4, Berdyansk, 71118, Ukraine

    I. V. Rogozin & M. B. Kotlyarevsky

  2. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    A. N. Georgobiani, V. I. Demin & L. S. Lepnev

Authors
  1. I. V. Rogozin
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  2. A. N. Georgobiani
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  3. M. B. Kotlyarevsky
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  4. V. I. Demin
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  5. L. S. Lepnev
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Correspondence to I. V. Rogozin.

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Original Russian Text © I.V. Rogozin, A.N. Georgobiani, M.B. Kotlyarevsky, V.I. Demin, L.S. Lepnev, 2013, published in Neorganicheskie Materialy, 2013, Vol. 49, No. 6, pp. 604–608.

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Rogozin, I.V., Georgobiani, A.N., Kotlyarevsky, M.B. et al. Activation of p-type conduction in ZnO:N films by annealing in atomic oxygen. Inorg Mater 49, 568–571 (2013). https://doi.org/10.1134/S0020168513050130

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  • DOI: https://doi.org/10.1134/S0020168513050130

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