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Electrical properties of n-Cd1 − x Co x GeAs2 (x = 0.05–0.15) at high pressures

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Abstract

The resistivity (ρ) and Hall coefficient (R H) of n-Cd1 − x Co x GeAs2 with x = 0.05–0.15 were measured as functions of temperature (at atmospheric pressure) and pressure (up to p = 7 GPa). The temperature-dependent ρ data were used to determine the ionization energy of a cobalt-related impurity center. In the ρ(p) and R H(p) curves, we identified structural semiconductor-semiconductor phase transitions under both increasing and decreasing pressure. Using a mixed-phase structure-effective medium model, we assessed the dynamics of the variation of phase composition with pressure.

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Correspondence to A. Yu. Mollaev.

Additional information

Original Russian Text © A.Yu. Mollaev, R.K. Arslanov, I.K. Kamilov, V.M. Novotortsev, S.F. Marenkin, R.G. Dzhamamedov, P.P. Khokhlachev, I.V. Fedorchenko, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 11, pp. 1200–1204.

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Mollaev, A.Y., Arslanov, R.K., Kamilov, I.K. et al. Electrical properties of n-Cd1 − x Co x GeAs2 (x = 0.05–0.15) at high pressures. Inorg Mater 48, 1070–1074 (2012). https://doi.org/10.1134/S0020168512110076

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Keywords

  • Hall Coefficient
  • Ferromagnetic Semiconductor
  • Effective Medium Model
  • Prevent Vapo Rization
  • Single Crystal Germanium