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Electrical and magnetic properties of the diluted magnetic semiconductors Cd1 − x Mn x GeP2 and Cd1 − x Mn x GeAs2 at high pressures

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Abstract

The structural and magnetic phase transitions and magnetoresistance of the diluted magnetic semiconductors Cd1 − x Mn x GeAs2 and Cd1 − x Mn x GeP2 have been studied at high hydrostatic pressures, up to 7 GPa. The normal and anomalous Hall coefficients of the samples have been determined graphically from experimental data.

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Correspondence to A. Yu. Mollaev.

Additional information

Original Russian Text © A.Yu. Mollaev, I.K. Kamilov, R.K. Arslanov, V.M. Novotortsev, S.F. Marenkin, V.M. Trukhan, T.R. Arslanov, U.Z. Zalibekov, I.V. Fedorchenko, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 9, pp. 990–994.

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Mollaev, A.Y., Kamilov, I.K., Arslanov, R.K. et al. Electrical and magnetic properties of the diluted magnetic semiconductors Cd1 − x Mn x GeP2 and Cd1 − x Mn x GeAs2 at high pressures. Inorg Mater 48, 872–876 (2012). https://doi.org/10.1134/S0020168512090105

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Keywords

  • Magnetic Phase Transition
  • Hall Coefficient
  • Dilute Magnetic Semiconductor
  • Phase Transition Pressure
  • Magnetoresis Tance