Abstract
Data are presented which demonstrate that the {111} and {100} surfaces of a silicon whisker in contact with a liquid metal solvent droplet are more anisotropic than those in contact with the vapor phase. Melting of metal solvent particles on a silicon substrate is accompanied by wettability anisotropy: the (111) close-packed faces of silicon are more poorly wetted by liquid solvent droplets than are the other faces.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Givargizov, E.I., Fundamental Aspects of VLS-Growth, J. Cryst. Growth, 1975, vol. 31, pp. 20–30.
Schmidt, V., Senz, S., and Gosele, U., The Shape of Epitaxially Grown Silicon Nanowires and the Influence of Line Tension, J. Appl. Phys., 2005, vol. 80, pp. 445–450.
Schwarz, K.W. and Tersoff, J., From Droplets to Nanowires: Dynamics of Vapour-Liquid-Solid Growth, Phys. Rev. Lett., 2009, no. 102, paper 206 101.
Wagner, R., Growth of Whiskers by the VLS Mechanism, Whisker Technology, Levitt, A., Ed., New York: Academic, 1969.
Dolgachev, A.A., Nebol’sin, V.A., Shchetinin, A.A., and Tatarenkov, A.F., Nekotorye zakonomernosti protsessov gazofaznogo osazhdeniya nitevidnykh kristallov fosfida galliya (Some Aspects of Vapor-Phase Growth of Gallium Phosphide Whiskers), Available from VINITI, 1986, Voronezh, no. 1001-V86.
Lubov, M.N., Kulikov, D.V., and Trushin, Yu.V., Kinetic Model of Growth of GaAs Nanowires, Tech. Phys., 2010, no. 1, pp. 85–91.
Lind, E., Persson, M.P., Niquet, Y.-M., and Wernersson, L.-E., Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs, IEEE Trans. Electron. Devices, 2009, vol. 56, pp. 201–205.
Zhang, Y.F., Tang, Y.H., Wang, N., et al., One-Dimensional Growth Mechanism of Crystalline Silicon Nanowires, J. Cryst. Growth, 1999, vol. 197, pp. 136–140.
Nebol’sin, V.A., Shchetinin, A.A., Sushko, T.I., and Boldyrev, P.Yu., RF Patent 2 111 293, 1998.
Naidich, Yu.V., Kontaktnye yavleniya v metallicheskikh rasplavakh (Contact Phenomena in Metallic Melts), Kiev: Naukova Dumka, 1972.
Klimovskaya, A.I., Baitsar, R.I., and Ostrovskii, I.P., X-Ray Diffraction Study of Submicron-Sized n-Type Silicon Whiskers, Izv. Akad. Nauk, Ser. Fiz., 1998, vol. 57, no. 11, pp. 210–212.
Nashel’skii, A.Ya., Proizvodstvo poluprovodnikovykh materialov (Semiconductor Materials Production), Moscow: Metallurgiya, 1989.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.A. Nebol’sin, A.A. Dolgachev, B.A. Spiridonov, E.V. Zotova, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 8, pp. 867–872.
Rights and permissions
About this article
Cite this article
Nebol’sin, V.A., Dolgachev, A.A., Spiridonov, B.A. et al. Effect of interfacial free energy anisotropy on silicon whisker growth. Inorg Mater 48, 757–762 (2012). https://doi.org/10.1134/S0020168512080109
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S0020168512080109