Abstract
Polycrystalline, 50- to 70-nm-thick barium strontium titanate films of composition Ba0.8Sr0.2TiO3 have been grown on single-crystal silicon substrates by rf ion-beam sputtering. We have determined their structure and composition and detected impurities at the film/substrate interface in the form of titanium silicide islands. The deposition of a 4- to 6-nm-thick TiO2 buffer layer onto Si by ion-beam sputtering before ferroelectric film growth is shown to prevent uncontrolled formation of impurities near the interface. The buffered heterostructures possess high thermal stability.
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Original Russian Text © A.I. Stognij, N.N. Novitskii, A.A. Evdokimov, M.S. Afanas’ev, V.A. Ketsko, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 6, pp. 712–715.
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Stognij, A.I., Novitskii, N.N., Evdokimov, A.A. et al. Ba0.8Sr0.2TiO3 ferroelectric nanofilms on silicon buffered with a TiO2 layer. Inorg Mater 48, 619–621 (2012). https://doi.org/10.1134/S0020168512060192
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DOI: https://doi.org/10.1134/S0020168512060192