Abstract
This paper describes the growth of tubular polycrystalline 3C-SiC samples by chemical vapor deposition (CVD). The use of propionitrile as a precursor for nitrogen doping ensures the growth of polycrystalline 3C-SiC layers with a 1000°C resistivity of 0.1–0.2 Ω cm and zero temperature coefficient of resistance. Such 3C-SiC tubes can be used as silicon carbide electric heaters.
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Original Russian Text © L.M. Ivanova, K.D. Demakov, M.N. Shakhov, Yu.N. Prokhorov, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 6, pp. 681–685.
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Ivanova, L.M., Demakov, K.D., Shakhov, M.N. et al. CVD silicon carbide electric heaters. Inorg Mater 48, 588–592 (2012). https://doi.org/10.1134/S0020168512060040
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DOI: https://doi.org/10.1134/S0020168512060040