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Composition and structural perfection of (AIII,Mn)BV and MnBV (A = Ga, In; B = Sb, As, P) nanolayers

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Abstract

We have determined the elemental composition of laser-deposited (Ga,Mn)Sb, (In,Mn)As, MnP, MnAs, and MnSb layers. The InMnAs layers were not single-phase and contained MnAs clusters. Active Ga and Mn diffusion to the substrate and arsenic diffusion from the substrate during the GaMnSb growth process is accompanied by the formation of a GaMnAs intermediate layer.

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Authors and Affiliations

  1. Lobachevsky State University, pr. Gagarina 23, Nizhni Novgorod, 603950, Russia

    V. S. Dunaev

  2. Research Institute of Physics and Technology, Lobachevsky State University, pr. Gagarina 23/3, Nizhni Novgorod, 603950, Russia

    B. N. Zvonkov, Yu. A. Danilov & O. V. Vikhrova

  3. Institute for Physics of Microstructures, Russian Academy of Sciences, ul. Ulyanova 46, Nizhni Novgorod, 603950, Russia

    Yu. N. Drozdov & M. N. Drozdov

  4. Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, ul. Tropinina 49, Nizhni Novgorod, 603950, Russia

    A. I. Suchkov

Authors
  1. V. S. Dunaev
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  2. B. N. Zvonkov
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  3. Yu. A. Danilov
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  4. O. V. Vikhrova
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  5. Yu. N. Drozdov
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  6. M. N. Drozdov
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  7. A. I. Suchkov
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Corresponding author

Correspondence to Yu. A. Danilov.

Additional information

Original Russian Text © V.S. Dunaev, B.N. Zvonkov, Yu.A. Danilov, O.V. Vikhrova, Yu.N. Drozdov, M.N. Drozdov, A.I. Suchkov, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 6, pp. 643–648.

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Dunaev, V.S., Zvonkov, B.N., Danilov, Y.A. et al. Composition and structural perfection of (AIII,Mn)BV and MnBV (A = Ga, In; B = Sb, As, P) nanolayers. Inorg Mater 48, 553–558 (2012). https://doi.org/10.1134/S0020168512050044

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  • DOI: https://doi.org/10.1134/S0020168512050044

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