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Etching behavior of CdTe, CdTe〈Ge〉, CdTe〈Sn〉, and CdTe〈Pb〉 single crystals in aqueous (NH4)2Cr2O7-HBr-citric acid solutions

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Abstract

We have studied the dissolution behavior of undoped and Group IV (Ge, Sn, and Pb) doped cadmium telluride single crystals in aqueous (NH4)2Cr2O7-HBr-citric acid solutions, constructed dissolution rate-etchant composition diagrams, and located the composition regions of polishing, selective, and non-polishing solutions. The doping effect on the chemical etching process has been examined, and the rate-limiting steps in the chemical dissolution of the materials studied have been identified. We have assessed the surface condition of the etched crystals by microstructural analysis and surface profilometry and optimized the etchant composition for the dynamic chemical polishing of these semiconductors.

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Authors and Affiliations

  1. Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, Kyiv, 03028, Ukraine

    Z. F. Tomashik, P. S. Chukhnenko, V. N. Tomashik, G. M. Okrepka & I. B. Stratiichuk

  2. Fed’kovich National University, ul. Kotsyubinskogo 2, Chernivtsi, 58012, Ukraine

    V. G. Ivanits’ka

Authors
  1. Z. F. Tomashik
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  2. P. S. Chukhnenko
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  3. V. G. Ivanits’ka
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  4. V. N. Tomashik
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  5. G. M. Okrepka
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  6. I. B. Stratiichuk
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Corresponding author

Correspondence to Z. F. Tomashik.

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Original Russian Text ¢ Z.F. Tomashik, P.S. Chukhnenko, V.G. Ivanits’ka, V.N. Tomashik, G.M. Okrepka, I.B. Stratiichuk, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 2, pp. 157–161.

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Tomashik, Z.F., Chukhnenko, P.S., Ivanits’ka, V.G. et al. Etching behavior of CdTe, CdTe〈Ge〉, CdTe〈Sn〉, and CdTe〈Pb〉 single crystals in aqueous (NH4)2Cr2O7-HBr-citric acid solutions. Inorg Mater 48, 114–118 (2012). https://doi.org/10.1134/S0020168512010153

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  • DOI: https://doi.org/10.1134/S0020168512010153

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