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Morphology of GaSb-based island films

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Abstract

GaSb nanoisland films have been grown via incongruent evaporation of Ga1 − x Sb x films, and their surface morphology has been studied by atomic force microscopy. The surface density and characteristic dimensions of the islands have been shown to depend on the evaporation temperature. The fractal dimension of the surface of the grown structures has been evaluated.

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Authors and Affiliations

  1. Moscow Institute of Steel and Alloys (National University of Science and Technology), Leninskii pr. 4, Moscow, 119049, Russia

    A. R. Kushkhov & O. I. Rabinovich

  2. Kabardino-Balkar State University, ul. Chernyshevskogo 173, Nalchik, 360004, Russia

    D. S. Gaev

Authors
  1. A. R. Kushkhov
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  2. O. I. Rabinovich
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  3. D. S. Gaev
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Correspondence to A. R. Kushkhov.

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Original Russian Text © A.R. Kushkhov, O.I. Rabinovich, D.S. Gaev, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 1, pp. 14–20.

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Kushkhov, A.R., Rabinovich, O.I. & Gaev, D.S. Morphology of GaSb-based island films. Inorg Mater 48, 10–15 (2012). https://doi.org/10.1134/S0020168512010098

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  • DOI: https://doi.org/10.1134/S0020168512010098

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